PAM XIAMEN offers Si wafers.
Our clients often use the following silicon wafers for the above applications:
100mm P(100) 0-100 ohm-cm SSP 500um Test Grade
PDMS micro-fluidic chip platforms for micro-organoid cell culture applications.
Microfluidic platform
Characterization
Definition of a microfluidic platform
A microfluidic platform provides a set of fluidic unit operations, which are [...]
2019-02-25meta-author
PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] [...]
2019-02-22meta-author
PAM XIAMEN offers 12 inch silicon wafers. We have all the grades including:
Prime grade 300mm silicon wafers
Test grade 300mm silicon wafers
Mechanical 300mm silicon wafers
Reclaimed 300mm silicon wafers
We can deposit the following onto our 300mm silicon wafers including:
Thermal oxide, wet and dry on 300mm silicon [...]
2019-02-20meta-author
PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
2019-03-12meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author