Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering

  • Home
  • News
  • Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering

Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering

Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering
InGaN films were grown on (1 1 1) silicon substrates by reactive magnetron sputtering. It was demonstrated that the indium composition in the InGaN films can be controlled by varying the ratio of the applied radio-frequency power of the indium target to that of the GaAs target. Optical investigation showed that the bandgap energy of the InGaN films can be tailored in wide range to obtain maximal absorption of solar energy for improving the efficiency of a solar cell. Raman scattering analysis revealed that A1(LO) phonon in InGaN wurtzite structure obeys a one-mode behavior. The results indicates that the reactive sputtering is a promising growth technique for obtaining InGaN layers on silicon substrates with low cost and good compatibility with silicon based devices.
Highlights
• Reactive sputtering is a promising technique for growing InGaN films.
• Bandgap of InGaN can be tailored in wide range.
• A1(LO) phonon in InGaN wurtzite structure obeys a one-mode behavior.
Source: Journal of Alloys and Compounds
If you need more information about Growth of InGaN layers on (1 1 1) silicon substrates by reactive sputtering，please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2014-02-08

Share this post

Related Posts

4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4

PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm. PRIME WAFERS SILICIUM FZ DIAMETER 4’’ (100mm+/-0.5mm) ORIENTATION <1-0-0> +/-1° THICKNESS : 400µm +/-25µm DSP TTV < 10µm – BOW < 40µm FLAT : 32.5mm TYPE P RESISTIVITY : 5000 – 10000 [...]

2019-07-05meta-author
Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition

Hyung Koun Cho∗ Department of Metallurgical Engineering, Dong-A University, Busan    604-714 Jeong Yong Lee Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon   305-701 We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]

2021-12-22meta-author
8″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 8″CZ Prime Silicon Wafer With Notch It will be carried out after the silicon ingot is made. A flat angle is cut on the silicon ingot below 200 mm, which is called flat. In order to reduce waste, only a small round hole [...]

2020-06-15meta-author
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices   We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]

2013-04-24meta-author
The effect of hydrogen plasma treatment on the Au–CdZnTe interface

This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated [...]

2013-11-06meta-author , ,
Ag Nanostructures on GaN (0001): Morphology Evolution Controlled by the Solid State Dewetting of Thin Films and Corresponding Optical Properties

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands    of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,      Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance    for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of    Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: Ag Nanostructures on GaN (0001): Morphology Evolution Controlled by the Solid State Dewetting of Thin [...]

2019-10-25meta-author