PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) offers the highest purity InGaAs / InP Epitaxial Wafer in the industry today. Sophisticated manufacturing processes have been put in place to customize and produce high quality InP (Indium Phosphide) Epitaxial wafers up to 4 inches with wavelengths from 1.7 to 2.6μm, [...]
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 3mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 50%
Output Power: 200W
Cavity Length:3mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
GaN epitaxy template on Sapphire substrate with N-type, P-type or semi-insulating is available for the preparation of semiconductor optoelectronic devices and electronic devices. GaN epitaxial layer on sapphire substrate refers to a composite structure composed of a gallium nitride single crystal thin film material [...]
2019-04-22meta-author
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:
1. N Type GaN Substrate Datasheet
1.1 4″(100mm) Undoped Free-standing GaN Substrate
Item
PAM-FS-GaN100-U
Conduction Type
Undoped
Size
4″(100)+/-1mm
Thickness
350-450um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
–
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
–
Resistivity(300K)
<0.5Ω·cm
Dislocation Density
<5×10^6cm-2
FWHM
–
TTV
<=35um
BOW
<=50um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area
≥ 90 [...]
2020-03-25meta-author
AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
2012-12-04meta-author