InGaAs/InP epi wafer for PIN

We can offer 2″ InGaAs/InP epi wafer for PIN as follows:
 
InP Substrate:
InP Orientation: (100)
Doped with Fe, Semi-Insulating
wafer Size: 2″ diameter
Resistivity:>1×10^7)ohm.cm
EPD:<1×10^4 /cm^2
Single side polished.
EPI layer :
InxGa1-xAs
Nc>2×10^18 /cc (using Si as dopant),
Thickness :0.5 um (+/- 20%)
Roughness of epi-layer, Ra<0.5nm
Source: PAM-XIAMEN
If you need more information about InGaAs/InP epi wafer for PIN, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.comor powerwaymaterial@gmail.com.

Share this post