InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates



We provide InGaAsP/InGaAs epi on InP substrates as follows:


1.Structure: 1.55um InGaAsP QW laser


No. Layer Doping
0 InP Substrate S-doped, 2E18/cm-3
1 n-InP buffer 1.0um, 2E18/cm-3
2 1.15Q-InGaAsP waveguide 80nm,undoped
3 1.24Q-InGaAsP waveguide 70nm,undoped
4 4×InGaAsP QW(+1%)

5×InGaAsP Barrier







5 1.24Q-InGaAsP waveguide 70nm,undoped
6 1.15Q-InGaAsP waveguide 80nm,undoped
7 InP space layer 20nm,undoped
8 InP 100nm,5E17
9 InP 1200 nm, 1.5E18
10 InGaAs 100 nm, 2E19



1)   Method: MOCVD

2)   Size of wafer: 2”

3)   InGaAsP/InGaAs  growth on InP substrates

4)   3-5 types of InGaAsP composition

5)   PL tolerance of +/- 5nm, PL std. dev. <3nm across the wafer (with an exclusion zone of 5mm from the wafer circumference)

6)   PL target range 1500nm.

7)   Strain target -1.0% +/- 0.1% (compressive strain)

8)    No. of layers: 8-20

9)   Total growth thickness: 1.0~3.0um

10)   Parameters to be measured: X-Ray Diffraction Measurement (thickness, strain), Photoluminescence Spectrum (PL, PL uniformity), Carrier Concentration Profiling


We compare the photocarrier lifetime measured in Br-irradiated InGaAs and cold Fe-implanted InGaAsP. We also demonstrate the possibility of a two-photon absorption (TPA) process in ErAs:GaAs. The lifetime and the TPA were measured

with a fiber-based 1550 nm time-resolved differential transmission (∆T) set-up. The InGaAs-based materials show a positive ∆T with sub-picosecond lifetime, whereas ErAs:GaAs shows a negative ∆T consistent with a two-photon absorption process.


Source: PAM-XIAMEN, American Chemical Society


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