PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab(USA),University of California, [...]
2019-10-29meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrate (100)
BaTiO3 (100) 10×3 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.15 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 1SP Substrate grade (with domains)
BaTiO3 (100) 5×5 x0.5 mm, 2SP [...]
2019-04-17meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
V-shaped defects in InGaN/GaN multiquantum wells
InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]