InP/InGaAs/InP epi wafer

We can offer 2″ InP/InGaAs/InP epi wafer as follows:
InP Substrate:
Indium Phosphide wafers,
P/E 2″dia×350+/-25um,
n-type InP:S
(100)+/-0.5°,
EDP<1E4/cm2.
One-side-polished, back-side matte etched, SEMI Flats.
EPI layer :
Epi 1: InGaAs:(100)
       Thickness:100nm,
       etching stop layer
Epi 2: InP:(100)
       Thickness:50nm,
        bonding layer
Source: PAM-XIAMEN
If you need more information about InP/InGaAs/InP epi wafer , please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.comor powerwaymaterial@gmail.com.

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