PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb

As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team

3)2”InAs

Type/Dopant:N Un-doped

Orientation : <111>A ±0.5°

Thickness：500um±25um

epi-ready

Ra<=0.5nm

Carrier Concentration(cm-3):1E16~3E16

Mobility(cm -2 ):>20000

EPD（cm -2 ）:<15000

SSP

5)2”InAs

Type/Dopant:N/P

Orientation ：(100),

Carrier Concentration(cm-3)：(5-10)E17,

Thickness：500 um

SSP

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

As a InP wafer supplier,we offer InP wafer list for your reference, if you need price detail, please contact our sales team

1)2″InP wafer
Orientation:<100>±0.5°
Type/Dopant:N/S;N/Un-doped
Thickness:350±25mm
Mobility:>1700
Carrier Concentration:(2~10)E17
EPD:<50000cm^-2
Polished:SSP

2)1″,2″InP wafer
Orientation:<100>±0.5°
Type/Dopant:N/Un-doped
Thickness:350±25mm
Mobility:>1700
Carrier Concentration:(2~10)E17
EPD:<50000cm^-2
Polished:SSP

8)2″ size InGaAs/InP epitaxial wafer,and we accept custom specs.
Substrate: (100) InP substrate
Epi Layer 1: In0.53Ga0.47As layer , undoped , thickness 200 nm
Epi Layer 2: In0.52Al0.48As layer , undoped , thickness 500 nm
Epi Layer 3:In0.53Ga0.47As layer , undoped , thickness 1000 nm
Top Layer :In0.52Al0.48As layer , undoped , thickness 50 nm

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

As a InSb wafer supplier,we offer InSb wafer list for your reference, if you need price detail, please contact our sales team

3)2″InSb
Orientation：(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP

5)2″InSb
Thickness:525±25µm,
Orientation：[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=（4-8）E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

All wafers are offered with high quality epitaxy ready finishing. Surfaces are characterised by in-house, advanced optical metrology techniques which include Surfscan haze and particle monitoring, spectroscopic ellipsometry and grazing incidence interferometry

The influence of annealing temperature on the optical properties of surface electron accumulation layers in n-type (1 0 0) InAs wafers has been investigated by Raman spectroscopy. It exhibits that Raman peaks due to scattering by unscreened LO phonons disappear with increasing temperature, which indicates that the electron accumulation layer in InAs surface is eliminated by annealing. The involved mechanism was analyzed by X-ray photoelectron spectroscopy, X-ray diffraction and high-resolution transmission electron microscopy. The results show that amorphous In2O3 and As2O3 phases are formed at InAs surface during annealing and, meanwhile, a thin crystalline As layer at the interface between the oxidized layer and the wafer is also generated which leads to a decrease in thickness of the surface electron accumulation layer since As adatoms introduce acceptor type surface states