PAM XIAMEN offers Moissanite Raw Crystal Silicon Carbide.
High quality colorless raw Moissanite crystals (D-E-F color) from PAM XIAMEN are grown using advanced technologies. Gem grade Moissanite silicon carbide crystals are available in different sizes ranging from tens of grams to kilograms.
What is Moissanite?
In 1893, [...]
2019-03-14meta-author
VCSEL Market Overview
At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL. III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark [...]
2018-09-27meta-author
PAM-XIAMEN, one of LED wafer manufacturers, offers GaN Wafer for Fabricating LED Devices, which is GaN Epi Structure with InGaN MQWs on sapphire substrate, and can be blue or green emission:
1. Specification of GaN Wafer for LED Devices
No1. PAM200614-GAN-LED
size : 2 inch
WD : 455 ± 10nm
[...]
2020-06-02meta-author
The FZ (float zone) gas-phase doped silicon single crystal with high purity, few defects, low compensation, and low oxygen and carbon content can be supplied by PAM-XIAMEN. It is widely used in various high-sensitivity detectors and low-loss microwave devices. To get more specifications of [...]
2022-08-16meta-author
InP epitaxial wafers with solar cell structure that a p-InGaAs lattice matched to n-InP substrate can be provided by PAM-XIAMEN. Indium phosphide is one of the main group III-V compound semiconductors for manufacturing multi-compound solar cells. These multi-compound solar cells mainly include GaAs, InP, [...]
2021-11-19meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2
6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(111)
3
Conductivity Type
n
4
Dopant
Phosphorus.
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
5000 – 10,000 Wcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, DSP
11
Edge [...]
2020-04-17meta-author