We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab(USA),University of California, [...]
2019-10-29meta-author
PAM XIAMEN offers Ti: Sapphire Crystal
Ti: Sapphire Crystal
Ti Sapphire Crystal
Introduction
Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm.
This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers,
mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
2019-07-24meta-author
The development of SiC and GaN power semiconductor market
The current state of SiC technology and market, and the development trend in the next few years.
The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase [...]
2018-11-14meta-author
Silicon transient voltage suppressor (TVS) is one of silicon diodes, and has extremely fast response speed (less than 1ns) and relatively high surge current absorption ability, and can be used to protect equipment or circuits, even integrated circuits, MOS devices, hybrid circuits, and other voltage sensitive semiconductor [...]
2023-09-01meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-11meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]