Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author
PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include [...]
2020-03-25meta-author
PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
High quality MgO magnesium oxide crystals are used are used widely for various thin film applications. Customized MgO crystal substrates are available upon request.
1.Specification of MgO Magnesium Oxide Single Crystal
Main Parameters
Growth Method
Special Arc Melting
Crystal Structure
Cubic
Unit cell constant
a = [...]
2019-03-14meta-author
PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single [...]
2019-03-11meta-author
PAM XIAMEN offers 6″ Monocrystalline silicon wafers with insulating oxide
6″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author