Layer structure of 703nm Laser

We can offer Layer structure of 703nm Laser as follows:

Layer	Composition	Thickness (um)	Doping(cm-3)
Cap	P+- GaAs	0.2	Zn:>1e19
Cladding	p – Al0.8Ga0.2As	1	Zn:1e18
Etch stop	GaInP	0.008	Zn:1e18
Top barrier	Al0.45Ga0.55As	0.09	Undoped
Well	Al0.18Ga0.82As	0.004	Undoped
Barrier	Al0.45Ga0.55As	0.01	Undoped
Well	Al0.18Ga0.82As	0.004	Undoped
Barrier	Al0.45Ga0.55As	0.01	Undoped
Well	Al0.18Ga0.82As	0.004	Undoped
Bottom barrier	Al0.45Ga0.55As	0.09	Undoped
Cladding	n – Al0.8Ga0.2As	1.4	Si:1e18
Buffer	n – GaAs	0.5	Si:1e18
Substrate	n+ – GaAs		S :>1e18

Source:PAM-XIAMEN

For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.

2015-02-02 Layer structure of 703nm Laser, recast layer laser, strained l

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Layer structure of 703nm Laser

Layer structure of 703nm Laser

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