Layer structure of 703nm Laser

Layer structure of 703nm Laser

 

We can offer Layer structure of 703nm Laser as follows:

 

Layer Composition Thickness (um) Doping(cm-3)
Cap P+- GaAs 0.2 Zn:>1e19
Cladding p – Al0.8Ga0.2As 1 Zn:1e18
Etch stop GaInP 0.008 Zn:1e18
Top barrier Al0.45Ga0.55As 0.09 Undoped
Well Al0.18Ga0.82As 0.004 Undoped
Barrier Al0.45Ga0.55As 0.01 Undoped
Well Al0.18Ga0.82As 0.004 Undoped
Barrier Al0.45Ga0.55As 0.01 Undoped
Well Al0.18Ga0.82As 0.004 Undoped
Bottom barrier Al0.45Ga0.55As 0.09 Undoped
Cladding n – Al0.8Ga0.2As 1.4 Si:1e18
Buffer n – GaAs 0.5 Si:1e18
Substrate n+ – GaAs   S :>1e18

 

Source:PAM-XIAMEN

 

For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com  or powerwaymaterial@gmail.com.

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