PAM XIAMEN offers Bi12GeO20 (BGO20).
Bi12GeO20 – BGO20 (001) 10x5x1.0 mm 1 side polished
Features:
Crystal Bi12GeO20 ( BGO20) — New generation acousto-optic crystal Wafer size: 10 x 5 x1.0 mm thick
Orientation: (001) +/-0.5o
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 sides polished
Package: Each wafer is packed in [...]
2019-04-17meta-author
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN
Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). [...]
2013-05-09meta-author
PAM XIAMEN offers GaAs (100) Te-doped crystal .
GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
2019-04-22meta-author
Measurement of threading dislocation densities in GaN by wet chemical etching
We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid [...]
2013-05-16meta-author
PAM XIAMEN offers4″ Silicon EPI Wafer-6
4″ Si epi wafer
Structure:
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)
Top layer intrinsic Si:
Resistivity≥50Ωcm,
Thickness 5μm,
Residual carrier concentration<1×1014/cm3
Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3
Layer with Ion Implantation: handled [...]
2019-11-01meta-author
Silicon Ingots -2
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
19.35
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
5.6
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
5.12
6″Ø ingot [...]
2019-02-15meta-author