PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.
The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed [...]
2019-03-07meta-author
PAM XIAMEN offers D263 Glass Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Our clients use our Schott D263 glass for the following applications:
Touch Panel Controls
Liquid Crystal Displays (LCD)
Electroluminescent Displays
Solar Cell Protective Glass
Diam
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Grade
50.8mm
550um
DSP
76.2mm
550um
DSP
100mm
500um
DSP
150mm
550um
DSP
200mm
500um
DSP
300mm
500um
DSP
For more information, please visit our [...]
2019-02-27meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
Highlights
•Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme.
•InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template.
•Overgrown [...]
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 53-60Ωcm
TTV ≤10μm
RRG ≤ 7%
front and back sides acid etched
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = [...]
2019-08-22meta-author