PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
PAM-XIAMEN can supply GaN wafers for LD, LED, HEMT and other applications. You can click following links for more GaN wafer specifications:
GaN based LED epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html;
GaN HEMT epitaxial wafer: https://www.powerwaywafer.com/gan-wafer/gan-hemt-epitaxial-wafer.html;
Blue GaN LD wafer: https://www.powerwaywafer.com/blue-gan-ld-wafer.html.
Why you need to choose GaN wafers for power devices?
The short video: https://youtu.be/5Uk9HVzQWAc [...]
2022-09-26meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
40mm
250
P/E
1-100
SEMI Prime, Soft cst
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
525
P/P
1-30
SEMI,
p-type Si:B
[100]
2″
1000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
1-10
SEMI Prime
p-type Si:B
[100]
2″
275
P/E
0.5-1.0
SEMI
p-type Si:B
[100]
2″
3150
C/C
>0.5
1Flat
p-type Si:B
[100]
2″
280
P/P
0.4-0.6
SEMI Prime,
p-type Si:B
[100]
2″
275
P/E
0.2-0.4
SEMI Prime,
p-type Si:B
[100]
2″
279
P/P
0.08-0.12
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
0.015-0.020
Groups of [...]
2019-03-07meta-author
PAM XIAMEN offers6″ FZ Silicon Wafer-5
Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
Warp<60μm,
One-side-polished, Particles: ≤10@≥0.3μm,
MCL (Na, Al, K, Fe, Ni, Cu, Zn)<5E10/cm²,back-side etched,
Tarnish, orange peel, contamination, haze,
micro scratch, chips, edge chips, crack,
crow feet, pin hole, pits, dent, waviness,
smudge&scar on [...]
2019-09-19meta-author
PAM-PA04 series detectors are high density pixel array detector based on CZT crystal. they can counting high-dose X-ray and imaging.
1. CZT High-Density Pixel Detector Specification
Material
CdZnTe
Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
>10.0×10.0mm2
Thickness
>0.7mm
Pixel size
<70um
Single Pixel leakage current
<0.01nA@100V
The maximum counting rate of linear region
>100Mcps/mm2
Electrode material
Au
Operation temperature
20℃~40℃
Storage temperture
10℃~40℃
Storage humidity
20%-80%
Details
2. Features of CZT Pixel Detector [...]
2019-04-24meta-author
PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, [...]
2020-03-06meta-author