Silicon wafers can be supplied with specifications as found in: https://www.powerwaywafer.com/silicon-wafer Silicon is a semiconductor material, and its resistivity is closely related to the doping concentration. Doping is that introducing a small amount of impurities into silicon crystals to alter their electrical properties. According to the requirements of conductivity type and [...]
The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power devices (eg. IGBT, PIN diode) [...]
PAM-XIAMEN can supply single crystal AlN substrate, additional sepcifications please see: https://www.powerwaywafer.com/aln-substrate.html. The AlN (aluminum nitride) crystal structure has hexagonal wurtzite (α- Phase) and cubic sphalerite (β- phase), and the hexagonal wurtzite structure is a stable structure, as shown in Fig. 1. AlN belongs to direct bandgap electronic semiconductors with a bandgap [...]
PAM-XIAMEN can supply AlN on Sapphire wafers, more specifications you can find in: https://www.powerwaywafer.com/aln-single-crystal-substrate-template-4.html At present, metal organic chemical vapor deposition (MOCVD) is considered one of the most widely used epitaxial techniques for AlN, but it always faces problems such as long growth cycles, high costs, and low substrate selection [...]
SiC wafers are available for power electronics, scientific or industrial applications, specifications as: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html SiC is a binary compound formed in a 1:1 ratio of Si and C elements, consisting of 50% silicon (Si) and 50% carbon (C). Its basic structural unit is the Si-C tetrahedron. 1. SiC Crystal Structure Arrangement 1.1 [...]
SiC epitaxial wafer is available for fabricating MOSFET devices, wafer specifications can be found in https://www.powerwaywafer.com/sic-mosfet-structure.html 1. Epitaxial Pits Epitaxial pits, as one of the most common surface morphology defects, have a typical surface morphology and structural profile as shown in Fig.1. The position of thread dislocation (TD) corrosion pits observed [...]
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of its devices. However, defects on [...]
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry. At present, significant breakthroughs have been made in this field both domestically and [...]
PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer 4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. After years of development, 6-inch [...]
PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC inevitably forms various defects, which affect the performance and reliability of SiC power devices. Below, we specifically explore the impact of triangle defects on the performance of SiC MOSFET devices. 1. [...]
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