PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>30000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com [...]
FZ Silicon Ignot Diameter 80+1mm-1 PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm. FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
PAM XIAMEN offers 6″ Prime EPI Wafer. 6″ EPI Wafer diameter: 6″ (150 +-0,5 mm) orientation: <100> primary flat length: 57.5mm+/-2.5mm primary flat: <110> +/- 1 no secondary flat overall thickness 280-325μm TTV <10um WARP/BOW <50um TIR <3um EPI layer: -type: n -dopant: P (phosphorus) – resistivity: 10-16 ohm [...]
PAM XIAMEN offers 4″ Prime EPI Wafer. Substrate: 1. Growth Method CZ 2. Diameter100+/-0.5mm 3. Type-Dopant, P- Boron 4. Resistivity 0.002 – 0.003 ohm-cm 5. Resistivity Radial Variation<10 % 6. Crystal Orientation<111> 4+/- 0.5degree 7. Primary Flat: Orientation Semi degree, Length Semi mm 8. Secondary Flat: Orientation Semi degree, [...]
PAM XIAMEN offers 6″ FZ Silicon Ignot. 6″ Silicon Ingot FY37b. 11.817Kg Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ Intrinsic undoped Si:-[100]±2.0°, Ro > 20,000 Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, Length: 286mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping 4″ CZ crystal Si wafer N type doped P Orientation<111> Resistivity 12-15Ωcm Thickness 205-220μm Prime Flat32.5±2.5mm no need for DSP, just double side lapping For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found [...]
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns [...]
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm. Diameter 150mm Thickness 1500±25μm phosphorus, boron or Antimony doped boron,<100> SSP Resistivity 1-100ohm cm with 200A thermal oxide and 1200A nitride TTV < 15um BOW < 80um For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]
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