Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q:The ideal waverlength for us is 465 nm, can you offer?. A:It is no problem, but you should know the wavelength should be a range, what we will offer you 465+/-2nm.
Q:Do you offer monocrystalline SiC or polycrystalline SiC? A:We offer monocrystalline SiC currently.
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range? A: We can offer misorientation in low degree, no problem.
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
Q:Do these 2” PSS LED wafers have the same epi-stack as the 4” PSS? If not, please send me the diagram with thicknesses. Wavelength can be same: central 455nm A: the 2″ detail layer thickness and structure is same as 4″, no any difference. Wavelength:455nm+/-5nm [...]
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