Silicon Wafer

Silicon Wafer

Si wafer Substrate -Silicon
Quantity Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Nc Mobility EPD
PCS (mm) (μm) Ω·cm   a/cm3 cm2/Vs /cm2
1-100 Si N/A 25.4 280 SSP 1-100 P/b N/A N/A N/A
1-100 Si N/A 25.4 280 SSP 1-100 P/b (1-200)E16 N/A N/A
1-100 Si (100) 25.4 525 N/A <0.005 N/A N/A N/A N/A
1-100 Si (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A
1-100 Si with Oxide layer (100) 25.4 525±25 SSP <0.005 N/A N/A N/A N/A
1-100 Si (100) 25.4 350-500 SSP 1~10 N/A N/A N/A N/A
1-100 Si (100) 25.4 400±25 P/E <0.05 P/ N/A N/A N/A
1-100 Si (100) 50.4 400±25 P/E <0.05 P/ N/A N/A N/A
1-100 p-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 P/ N/A N/A N/A
1-100 n-Si with 90 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 p-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 n-Si with 285 nm SiO2 (100) 50.4 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 Si with electrodes (100) 50.8 400 N/A <0.05 N/p 1E14-1E15 N/A N/A
1-100 Si (100) 50.8 275 SSP 1~10 N/A N/A N/A N/A
1-100 Si (100) 50.8 275±25 SSP 1~10 N/p N/A N/A N/A
1-100 Si (111) 50.8 350±15 SSP >10000 N/A N/A N/A N/A
1-100 Si (100) 50.8 430±15 SSP 5000-8000 N/A N/A N/A N/A
1-100 Si (111) 50.8 410±15 SSP 1~20 N/A N/A N/A N/A
1-100 Si (111) 50.8 400-500 SSP >5000 N/A N/A N/A N/A
1-100 Si (100) 50.8 525±25 SSP 1~50 N/A N/A N/A N/A
1-100 Si (100) 50.8 500±25 SSP 1~10 N  P N/A N/A N/A
1-100 Si (100) 50.8 500±25 P/P >700 P/ N/A N/A N/A
1-100 Si (100) 76.2 400±25 P/E <0.05 P/ N/A N/A N/A
1-100 p-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 P/ N/A N/A N/A
1-100 n-Si with 90 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 p-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 n-Si with 285 nm SiO2 (100) 76.2 500±25 P/E <0.05 N/ N/A N/A N/A
1-100 Si (100) 100 625 SSP >10000 N/A N/A N/A N/A
1-100 Si (100) 100 525 SSP N/A N/P N/A N/A N/A
1-100 Si (100) 100 320 SSP >2500ohm·cm P/b N/A N/A N/A
1-100 Si (100) 100 N/A SSP 10~30 N/p N/A N/A N/A
1-100 Si (100) 100 505±25 SSP 0.005-0.20 N/P-doped N/A N/A N/A
1-100 Si (100) 100 381 SSP 0.005-0.20 N/P-doped N/A N/A N/A
1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A
1-100 Si (100) 100 525 DSP 1-100 N/A N/A N/A N/A
1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A
1-100 Si with Oxide layer 3000A (100) 100 675±25 SSP 0.001-0.004 N/A N/A N/A N/A
1-100 Si (100) 100 625±25 SSP 0.001-0.004 N/A N/A N/A N/A
1-100 Si (100) 100 N/A SSP N/A P/b N/A N/A N/A
1-100 Si (100) 100 500±25 SSP 1~25 N/A N/A N/A N/A
1-100 Si (100) 100 500 SSP 1~10 P/ N/A N/A N/A
1-100 Si (100) 100 500±25 P/E 1-10 N/ N/A N/A N/A
1-100 Si (100) 100 500/525±25 P/P 1-10 N/ N/A N/A N/A
1-100 Si (100) 100 500/525±25 N/A N/A N/A N/A N/A N/A
1-100 Si (100) 100 500±25 P/P >700 P/ N/A N/A N/A
1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A
1-100 Si (100) 150 675±25 N/A  0.001-0.004 P/b N/A N/A N/A
1-100 Si (100)/(111) 150 550~650 DSP N/A N/A N/A N/A N/A
1-100 Si (100)/(111) 150 600-700 SSP <0.5 N/A N/A N/A N/A
1-100 Si (111) 150 400±25 DSP <50 N/ N/A N/A N/A
1-100 Si (100) 150 545 P/E 1-3 N/ N/A N/A N/A
1-100 Si (100) 200 725±25 SSP 1~25 P/ N/A N/A N/A

As a Silicon wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.

Note:

  • As manufacturer, we also accept small quantity for researcher or foundry.
  • Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

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