We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a GaInP/GaAs/Ge epi wafer structure as follows:
1. Specification of GaInP/GaAs/Ge Epi Wafer
|Layer||Material||Mole||Mole||Type||CV Level (cm-3)|
|Fraction (x)||Fraction (y)|
We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application, please click InGaP/GaAs Epi Wafer for Solar Cell
2. XRD of GaInP/GaAs/Ge Wafer
Figures a, b show the XRD of crystalline quality of GaInP/GaAs/Ge wafer.