Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (R_s) of GaN epilayer. The threading dislocation density (TDD) was estimated by calculating the full width at half maximum (FWHM) of GaN (0002) and (10-12) diffractions measured by HRXRD. The relationship between R_s and TDD in GaN epilayer was investigated. The influence of growth conditions of bottom GaN initial layer including carrier gas category (H₂ or N₂), growth temperatures, and growth pressures on the quality or resistivity of top GaN epilayer was discussed and analyzed. As a result, the improved resistivity was achieved in top GaN epilayer with low TDD by using H2 carrier, low growth temperature of 1050℃, and high growth pressure of 400mbar during the growth of bottom GaN initial layer.

Source:Jinglong Bu, Zhengyi Jiang and Sihai Jiao

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