PAM XIAMEN offers 2″ Silicon Oxide Wafer
2″ Silicon Oxide Wafer
Diameter (mm): 50mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < [...]
2020-04-24meta-author
The silicon carbide crystal most commonly used as a semiconductor material is 4H-SiC wafer. However, silicon carbide crystals have multiple types. Once the conditions are not well controlled in the process of the silicon carbide crystal growth, the resulting silicon carbide crystal structure may be 3C, 6H, 15R, etc., [...]
2021-04-08meta-author
Highlights
•We fabricated HV AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain electrodes.
•We examine impact of temperature on the electrical parameters of fabricated devices.
•The use of Schottky drain contacts increase the breakdown voltage from 505 to 900 V.
•The SD-HEMTs are characterized by lower increase of Ron [...]
PAM XIAMEN offers TiO2 Coated Sodalime Glass.
TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm
TiO2 Coated Sodalime Glass
Dimension: 1″ x1″x 0.7mm
Polish: both sides are optically clear
Nominal TiO2 film thickness: 150 nm +/- 10%
For more information, please visit our website: [...]
2019-04-29meta-author
GaAs(111) crystal wafer
PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer:
1.Wafer List
GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
2019-04-22meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author