Transmittance of Glass Wafer
Different Glass wafer material has different transmittance. The end user should check their detail application, and then choose corresponding glass wafer material, see below:
Transmission Rate of Jgs1 Glass Wafer
Transmission Rate of Jgs1 Glass Wafer
Transmittance of Glass Wafer
Transmission Rate of Jgs2 Glass [...]
2020-06-18meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
Highlights
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The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
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The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
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The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
Abstract
The metal-oxide-semiconductor [...]
2017-10-12meta-author
GaN-based Nanocolumn Emitters and related Technologies
Abstract: GaN nanocolumns, one-dimensional columnar nanocrystals, possess low dislocation and high light extraction efficiency properties; thus, the nanocolumns have a great potentiality to improve substantially the luminous efficiency in the green-to-red emission region. Periodically arranged GaN nanocolumns, in each [...]
PAM XIAMEN offers YAlO3 Single crystal.
YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching.
Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]
2019-05-21meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]
