Monitoring defects in III–V materials: A nanoscale CAFM study


•Nanoscale defects in III–V materials, grown over Si were characterized with CAFM.
•The defects exhibit higher conductivity.
•The contact rectifying feature is hide by a larger current under the reverse bias.
•Patterned samples fabricated using Aspect Ratio Trapping were also characterized.


The implementation of high mobility devices requires growing III–V materials on silicon substrates. However, due to the lattice mismatch between these materials, III–V semiconductors tend to develop structural defects affecting device electrical characteristics. In this study, the CAFM technique is employed for identification and analysis of nanoscale defects, in particular, Threading Dislocations (TD), Stacking Faults (SF) and Anti-phase Boundaries (APB), in III–V materials grown over silicon wafers.

Graphical abstract

Goal: nanoscale defects, as Threading Dislocations (TD), Stacking Faults (SF), among others, in III–V materials grown over silicon wafers were characterized using a CAFM. The presented results show that the CAFM can help to identify various types of structural defects in III–V materials, as well as measure their conductive characteristic.

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