PAM XIAMEN offers Float Zone Silicon Wafers, they use FZ Silicon substrates instead of Czochralski grown silicon.
Or simply put, Float Zone Si is most ly used low volume applications that require high-efficiency while CZ Silicon is used for high volume, less expensive applications.
1. Specifications [...]
2019-02-14meta-author
PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal.(Not sell it temporarily)
Technical specifications:
Melting point: 924°C (1,695 °F; 1,197 K)
Lattice constant: a = 6.46 Angstroms
Solubility in water: insoluble
Band gap: 0.25 eV (0 K)
0.32 eV (300 K)
Electron Mobility: 1600 cm2 V−1 s−1 (0 K)
6000 cm2 V−1 s−1 (300 K)
Crystal structure: Halite (cubic)
Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm.
Customization [...]
2019-03-14meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, [...]
2018-02-13meta-author
PAM XIAMEN offers high quality GaSb single crystal wafers.
1. Specifications of GaSb Single Crystal Wafers
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, [...]
2019-04-22meta-author
PAM XIAMEN offers Conductive Ceramic Substrates.
8% YSZ Ceramic Substrate 100x100x0.25 mm, fine ground
8% YSZ Ceramic Substrate 2″x 2″x0.5 mm, one side polished
Conductive Ceramic Target (1″ Dx 0.3 mm t )
Conductive Ceramic Separator Sheets w/ optional size for Li-Air & Solid [...]
2019-04-18meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
(mm)
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
N
Phos
FZ
(111) Off 2″ Towards (110)
2k-5k
350-400
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
10-30
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
50.8
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/E
PRIME
50.8
N
Phos
FZ
-100
>1000
200-500
P/P
PRIME
50.8
N
Phos
CZ
-100
225-275
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
225-275
P/P
PRIME
50.8
N
As
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
N
Sb
CZ
-100
.005-.02
250-300
P/P
PRIME
50.8
N
Phos
FZ
-100
>3000
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
N
Phos
CZ
-100
1-20
250-300
P/E/WTOx
50.8
N
Phos
FZ
-100
2000-5000
275-325
P/P
PRIME
50.8
N
Phos
CZ
-100
450-500
P/P
PRIME
50.8
N
Phos
CZ
-100
43485
500-550
P/E
PRIME
50.8
N
Phos
CZ
-100
1000-1050
P/E
PRIME
50.8
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.
PAM-XIAMEN develops advanced crystal [...]
2019-02-27meta-author