A Plane U-GaN Freestanding GaN Substrate
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate
| Item | PAM-FS-GAN A-U |
| Dimension | 5 x 10 mm2 or 5 x 20 mm2 |
| Thickness | 380+/-50um |
| Orientation | A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° |
| Conduction Type | N-type / lightly doped |
| Resistivity (300K) | < 0.1 Ω·cm |
| TTV | ≤ 10 µm |
| BOW | BOW ≤ 10 µm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | ≤5 x 106 cm-2 |
| Macro Defect Density | 0 cm-2 |
| Useable Area | > 90% (edge exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
For more information, please contact us email at [email protected] and [email protected]