A Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN A-U
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Undoped
Resistivity (300K)	< 0.1 Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness:	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶ cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

2020-08-17

25.4 (1 inch) Silicon Wafers

25.4 (1 inch) Silicon Wafers PAM XIAMEN offers 1″ silicon wafers. If you don’t see what you need, pleaes email us your specs and quantity. Item Dia Thickness (um) Orientation Type Dopant Resistivity (Ohm-cm) Polish Remark PAM1901 25.4mm 20000um <111> P B >1000 DSP FZ PAM1902 25.4mm 400um <100> P B ANY SSP Thickness is: 400+/-100um. PAM1903 25.4mm 500um <100> ANY SSP Wafers have particles. Wafers sold “As-Is”. PAM1904 25.4mm 280um <111> Undoped Undoped >2000 SSP Intrinsic FZ PAM1905 25.4mm 73.5um <100> Undoped Undoped >5000 DSP FZ, Float Zone PAM1906 25.4mm 500um <100> P B .01-.05 DSP NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1907 p-type Si:B [100] 1″ 280um P/E 0-100 ohm-cm SEMI, [...]

2019-02-15meta-author

6″ FZ Prime Silicon Wafer

PAM XIAMEN offers 6″ FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 6″ {150.0±0.3mm}Ø×625±15µm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm, Both-sides-polished, One SEMI Flat (57.5mm), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-07-02meta-author

Defect cluster recognition system for fabricated semiconductor wafers

The International Technology Roadmap for Semiconductors (ITRS) identifies production test data as an essential element in improving design and technology in the manufacturing process feedback loop. One of the observations made from the high-volume production test data is that dies that fail due to [...]

2015-12-24meta-author semiconductor wafer

Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds

Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and [...]

2012-06-20meta-author

60+1mm FZ Si Ingot -6

PAM XIAMEN offers 60+1mm FZ Si Ingot -6 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]

2020-04-16meta-author

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

This letter describes the heteroepitaxy of InP on Si by MOCVD. A new epitaxial structure with a thin GaAs intermediate layer (InP/GaAs/Si) is proposed to alleviate the large lattice mismatch (8.4%) between InP and Si. Using this structure, a 4-inch InP single crystal with [...]

2019-08-19meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

A Plane U-GaN Freestanding GaN Substrate

A Plane U-GaN Freestanding GaN Substrate

Share this post

Related Posts

25.4 (1 inch) Silicon Wafers

6″ FZ Prime Silicon Wafer

Defect cluster recognition system for fabricated semiconductor wafers

Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds

60+1mm FZ Si Ingot -6

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers