PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525±25µm.
Si wafers
Dia 4″ x 525±25µm
Type n or p
PRIME
CZ
(100)
1-20 ohm.cm
SSP
Ra<0.5nm
With marking laser on the back side as
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-07-01meta-author
PAM XIAMEN offers Highly Oriented Pyrolytic Graphite.
HOPG, is a relatively new form of high purity carbon and provides microscopists with a renewable and smooth surface. Unlike mica, HOPG is completely non-polar, and for samples where elemental analysis will also be done, it provides [...]
2019-05-06meta-author
PAM XIAMEN offers Single crystal GaTe Substrate.
Gallium(II) telluride, GaTe, is a chemical compound of gallium and tellurium. There is research interest in the structure and electronic properties of GaTe because of the possibility that it, or related compounds, may have applications in the [...]
2019-04-22meta-author
PAM XIAMEN offers GaN Template on Sapphire.
Gallium nitride substrates are matched in lattice constant and thermal expansion properties for epitaxial growth of doped GaN layers needed for fabrication of GaN-based devices. This eliminates stress and defects induced by growing GaN epi-layers on non-nitride [...]
2019-04-22meta-author
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers
Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on mass production.
PAM XIAMEN is effective [...]
2019-02-11meta-author
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we [...]
