Q: After MOCVD, do you anneal the wafer for p-GaN activation?

A:Yes! We will anneal the wafer for p-GaN activation

2018-06-19

Q:We want to know the refractive index of these SiC wafers?

Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755

2018-06-19meta-author

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.

2018-06-19meta-author

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.

2018-06-19meta-author

Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?

Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]

2018-06-19meta-author

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.

2018-06-19meta-author

Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?

Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD

2018-06-19meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

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A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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PAM-XIAMEN Offers photoresist plate with photoresist
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PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Q: After MOCVD, do you anneal the wafer for p-GaN activation?

Q: After MOCVD, do you anneal the wafer for p-GaN activation?

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Related Posts

Q:We want to know the refractive index of these SiC wafers?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?

Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?

Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?

Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers