Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Leading manufacturer of compound semiconductor material in China
Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range? A: We can offer misorientation in low degree, no problem.
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q: For GaN on sapphire, could you please let us know which side is epi-ready? A: Ga-face,epi-ready and N face is connecting to sapphire.
Q : does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A:Sorry, we can not offer fabrication of p and n [...]
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD