Ag Nanostructures on GaN (0001): Morphology Evolution Controlled by the Solid State Dewetting of Thin Films and Corresponding Optical Properties

Ag Nanostructures on GaN (0001): Morphology Evolution Controlled by the Solid State Dewetting of Thin Films and Corresponding Optical Properties

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Article title:

Ag Nanostructures on GaN (0001): Morphology Evolution Controlled by the Solid State Dewetting of Thin Films and Corresponding Optical Properties

Published by:

Sundar Kunwar1, Mao Sui1, Quanzhen Zhang1, Puran Pandey1, Ming-Yu Li1 and Jihoon Lee1,2*1College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 01897, South Korea 2Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville AR 72701,USA.

Picture of GaN wafer:










Silver (Ag) nanostructures have demonstrated the feasibility of being utilized in various optoelectronic, catalytic, biomedical, and sensor devices due to their excellent surface plasmon resonance characteristics. The geometrical structure, spacing, and spatial arrangement of nanostructures are crucial for controlling the properties and device performance. Herein, we demonstrate the fabrication of various configurations of self-assembled Ag nanostructures on GaN (0001) by the systematic control of deposition thickness and annealing duration. The surface morphology evolution is thoroughly investigated, and the corresponding influence on optical properties is probed. The evolution of Ag nanostructures in response to thermal annealing is described based on the dewetting of thin films, Volmer–Weber growth model, coalescence growth, and surface energy minimization mechanism. For the deposition amount variation between 1 and 100 nm, the Ag nanostructures show gradual morphological transitions such as small nanoparticles (NPs) to enlarged NPs between 1 and 7 nm, elongated nanostructures to cluster networks between 10 and 30 nm, and void evolution with layered nanostructures between 40 and 100 nm. In addition, the annealing duration effect has been studied between 0 and 3600 s, where the Ag nanostructures exhibit the evolution of network-like, elongated and isolated irregular shapes, ascribed to Ostwald’s ripening along with Ag sublimation. Furthermore, corresponding Raman, photoluminescence, and reflectance spectra reveal the morphology-dependent behaviors and are discussed based on the phonon, emission band, scattering, absorption, and surface plasmon effect.

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“2.1 GaN Substrate Preparation. Initially, n-type 5 μm-thick GaN templates were epitaxially grown on 650 μm-thick sapphires with an off-axis ±0.1° by the Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN, China) …”


About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Now PAM-XIAMEN offer GaN material including GaN substrate, GaN on sapphire, InGaN, InN, and AlN epitaxial wafer with a wide range of deposition rates, various doping levels, wide composition ranges, and low defect densities. As well as GaN based LED wafer and AlGaN/GaN HEMT wafer.

PAM-XIAMEN also offer SiC and GaAs/InP material from wafer substrate to epitaxial growth.

 Powerway Wafer Co.,Limited is a sub company of Xiamen Powerway Advanced Material Co., Ltd specialize in dealing with overseas orders.

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