Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaInP and other related products and services announced the new availability of size 2”&3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to offer AlGaInP layer to our customers including many who are developing better and more reliable for Light emitting diodes of high brightness, Diode lasers (could reduce laser operating voltage), Quantum well structure, Solar cells (potential). Our AlGaInP has excellent properties, it’s a semiconductor, which means that its valence band is completely full. The eV of the band gap between the valence band and the conduction band is small enough that it is able to emit visible light (1.7eV – 3.1eV). The band gap of AlGaInP is between 1.81eV and 2eV. This corresponds to red, orange, or yellow light, and that is why the LEDs made from AlGaInP are those colors. The availability improve boule growth and wafering processes.” and “Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our AlGaInP layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products.”
PAM-XIAMEN’s improved AlGaInP product line has benefited from strong tech,support from Native University and Laboratory Center.
Now it shows examples as follows:
1. Structure of AlGaInP LED Wafer emitting at around 630 nm
PAM-190219-ALGAINP
| Layer No. | Composition | Thickness |
| 6 | P-Gap | 7μm |
| 5 | P-AlInP | – |
| 4 | MQW | 220nm |
| 3 | N-AlInP | – |
| 2 | DBR n-AlGaAs/AlAs | – |
| 1 | Buffer layer n-GaAs | – |
| 0 | GaAs Substrate | 350μm |
2. 808nm laser structure
Layer:0 Material:GaAs substrate Type:N Level(cm-3):3.00E+18
Layer:1 Material:GaAs Thickness(um):0.5 Type:N Level(cm-3):2.00E+18
Layer:2 Material:[AI(X)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:N Level(cm-3):1.00E+18
Layer:3 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D
Layer:4 Material:GaAs(x)P X:0.86 Strain tolerance(ppm):+/-500 PL(nm):798+/-3 Thickness(um):0.013 Type:U/D
Layer:5 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D
Layer:6 Material:[AI(x)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:P Level(cm-3):1.00E+18
Layer:7 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.05 Type:P Level(cm-3):2.00E+18
Layer:8 Material:GaAs Thickness(um):0.1 Type:P Level(cm-3):>2.00E19
3. About AlGaInP Material
Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.)is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices,as it spans a direct bandgap from deep ultraviolet to infrared.AlGaInP is used in manufacture of light-emitting diodes of high-brightness red,orange, green, and yellow color, to form the heterostructure emitting light.It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which single crystals cannot 1D View. Another example of heteroepitaxy is gallium nitride (GaN) on sapphire.
4. Q&A of AlGaInP LED Wafer
Q1: Please find 780nm designs attached. Please let me know if designs are fine. Please let me also know what kind of testing from your side will be carried out to make sure the material quality is laser grade?
Layer:0 Material:GaAs substrate Type:N Level(cm-3):3.00E+18
Layer:1 Material:GaAs Thickness(um):0.5 Type:N Level(cm-3):2.00E+18
Layer:2 Material:[AI(X)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:N Level(cm-3):1.00E+18
Layer:3 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D
Layer:4 Material:GaAs(x)P X:0.77 PL(nm):770 Type:U/D
Layer:5 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.5 Type:U/D
Layer:6 Material:[AI(x)Ga]In(y)P X:0.3 Y:0.49 Strain tolerance(ppm):+/-500 Thickness(um):1 Type:P Level(cm-3):1.00E+18
Layer:7 Material:GaIn(x)P X:0.49 Strain tolerance(ppm):+/-500 Thickness(um):0.05 Type:P Level(cm-3):2.00E+18
Layer:8 Material:GaAs Thickness(um):0.1 Type:P Level(cm-3):>2.00E19
A: We can offer test report of PL of MQW and XRD of AlGaInP.According to our experience, your 780nm structure is poor characteristics, which can not guarantee the laser characteristics, therefore, this structure is not suggested.
Q2: With regard to 780nm wafers, probably you have an alternative solution for the active region, based on your experience of laser fabrication?
A: Our results this structure below 790nm is that the wave length of the laser threshold increases, the efficiency drops, laser characteristics deteriorated. Of course, the laser can also work, but the characters is weak. It is suggested that AlGaAs / AlGaInAs structure should be used in 780nm