AlGaInP epi wafer

AlGaInP epi wafer

 AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.

1.Specs of AlGaInP Wafers on Chips

AlGaInP LED Wafer for chip
Item No.:PAM-CAYG1101
Growth Technique – MOCVD
Substrate Material: Gallium arsenide
Substrate Conduction: n type
●Chip Dimensions:
1)Chip size:front size:8mil(±1mil)×8mil(±1mil)
                 back side:9mil(±1mil)×9mil(±1mil)
2)Chip thickness:7mil(±1mil)
3)Pad size:4mil(±0.5mil)
4)Structure:see 1-1
●Photoelectric Properties
Parameter Condition Min. Typ. Max. Unit
Forward Voltage(Vf1) If=10μA 1.35 V
Forward Voltage(Vf2) If=20mA 2.2 V
Reverse Voltage(Lr) Vr=10V 2 μA
Dominant wavelength(λd) If=20mA 565 575 nm
FWHM(Δλ) If=20mA 10 nm
●Luminous Intensity:
IV(mcd) 20-30 25-35 30-35 35-50 40-60 50-70 60-80

2. Band gap of strained AlGaInP on GaAs substrate

In this tutorial we want to study the band gaps of strained AlxGayIn1-x-yP on a GaAs substrate.
The material parameters are taken from
Band parameters for III-V compound semiconductors and their alloys
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan
J. Appl. Phys. 89 (11), 5815 (2001)
To understand the effect of strain on the band gap on the individual components of this quaternary, we first examine the effects on
1)AlP strained tensilely with respect to GaAs
2)GaP strained tensilely with respect to GaAs
3)InP strained compressively with respect to GaAs
4)AlxGa1-xP strained tensilely with respect to GaAs
5)GaxIn1-xP strained with respect to GaAs
6)AlxIn1-xP strained with respect to GaAs
7)Al0.4Ga0.6P strained tensilely with respect to GaAs
8)Ga0.4In0.6P strained compressively with respect to GaAs
9)Al0.4In0.6P strained compressively with respect to GaAs
Each material layer has a length of 10 nm in the simulation.
The material layers 4), 5) and 6) vary its alloy contents linearly:
4)AlxGa1-xP             from 10 nm to 20 nm from x=0.0 to x=1.0
5)GaxIn1-xP             from 30 nm to 40 nm from x=0.0 to x=1.0
6)AlxIn1-xP              from 50 nm to 60 nm from x=1.0 to x=0.0

3. About AlGaInP/InGaP Structure

Since InGaAlP quaternary materials can have a wide direct band gap, by adjusting the composition of In, Al and Ga, they can be lattice-matched with high-quality and low-cost GaAs thin films. The light-emitting range of the epitaxial structure can cover red, orange, yellow, yellow-green band. Thus in the visible light emitting diode, 650nm red laser has a wide range of applications.

AlGaInP quaternary compound materials are used to grow GaAs epitaxial wafers, which are widely used in high-brightness red light emitting diodes and semiconductor lasers and have become the mainstream material for red light emitting devices. The conduction band order of AlGaInP/GaInP heterojunctions is very small, with a maximum value of about 270meV, which is smaller than that of 350meV AlGaAs materials. The electronic barrier is relatively low, and the leakage current is formed. The threshold current of the laser based GaAs epitaxy wafer is increased, which is more obvious in high temperature and high current operation. The AlGaInP layer will scatter in the alloy, and the thermal resistance is much higher than that of AlGaAs. The excess heat causes the junction temperature and cavity surface temperature. Therefore, the characteristic temperature of AlGaInP laser is lower, and the electro-optical conversion efficiency becomes lower during continuous operation, and more heat is generated.

4. Refractive Index of AlGaInP



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