AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification
 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

· Orange LED Wafer Substrate:   

 

 

 

 

 

 

 

P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)    
Parameter
Chip Size7mil(±1mil)*7mil(±1mil)
Thickness7mil(±1mil)
P ElectrodeU/L
N ElectrodeAU
StructureSuch as right-shown
·Optical-elctric characters      
ParameterConditionMin.TypMax.Unit
Forward voltageIf=10μA1.35V
Reverse voltageIf=20mA2.2V
Reverse currentV=10V2μm
WavelengthIf=20mA565575nm
Half wave widthIf=20mA10nm
·Light intensity characters      
Brightness codeLALBLCLDLELFLGLH
IV(mcd)10-1515-2020-2525-3030-3535-4040-5050-60

 

Source:PAM-XIAMEN

 

If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or[email protected].

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