AlGaInP LED Chip Sepcification | ||||||||
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· Orange LED Wafer Substrate: |
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P+GaAs | ||||||||
p-GaP | ||||||||
p-AlGaInP | ||||||||
MQW | ||||||||
n-AlGaInP | ||||||||
DBR n-ALGaAs/AlAs | ||||||||
Buffer | ||||||||
GaAs substrate | ||||||||
·Chip Sepcification (Base on 7mil*7mil chips) | ||||||||
Parameter | ||||||||
Chip Size | 7mil(±1mil)*7mil(±1mil) | |||||||
Thickness | 7mil(±1mil) | |||||||
P Electrode | U/L | |||||||
N Electrode | AU | |||||||
Structure | Such as right-shown | |||||||
·Optical-elctric characters | ||||||||
Parameter | Condition | Min. | Typ | Max. | Unit | |||
Forward voltage | If=10μA | 1.35 | ┄ | ┄ | V | |||
Reverse voltage | If=20mA | ┄ | ┄ | 2.2 | V | |||
Reverse current | V=10V | ┄ | ┄ | 2 | μm | |||
Wavelength | If=20mA | 565 | ┄ | 575 | nm | |||
Half wave width | If=20mA | ┄ | 10 | ┄ | nm | |||
·Light intensity characters | ||||||||
Brightness code | LA | LB | LC | LD | LE | LF | LG | LH |
IV(mcd) | 10-15 | 15-20 | 20-25 | 25-30 | 30-35 | 35-40 | 40-50 | 50-60 |
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.