AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification


· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate

*·Chip Sepcification (Base on 7mil7mil chips)**
Parameter
Chip Size	7mil(±1mil)*7mil(±1mil)
Thickness	7mil(±1mil)
P Electrode	U/L
N Electrode	AU
Structure	Such as right-shown

·Optical-elctric characters
Parameter	Condition	Min.	Typ	Max.	Unit
Forward voltage	If=10μA	1.35	┄	┄	V
Reverse voltage	If=20mA	┄	┄	2.2	V
Reverse current	V=10V	┄	┄	2	μm
Wavelength	If=20mA	565	┄	575	nm
Half wave width	If=20mA	┄	10	┄	nm

·Light intensity characters
Brightness code	LA	LB	LC	LD	LE	LF	LG	LH
IV(mcd)	10-15	15-20	20-25	25-30	30-35	35-40	40-50	50-60

Source:PAM-XIAMEN

If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com orpowerwaymaterial@gmail.com.

2014-11-04 algainp laser diode, algainp led structure, algainp uhb-led

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