AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification


· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate

*·Chip Sepcification (Base on 7mil7mil chips)**
Parameter
Chip Size	7mil(±1mil)*7mil(±1mil)
Thickness	7mil(±1mil)
P Electrode	U/L
N Electrode	AU
Structure	Such as right-shown

·Optical-elctric characters
Parameter	Condition	Min.	Typ	Max.	Unit
Forward voltage	If=10μA	1.35	┄	┄	V
Reverse voltage	If=20mA	┄	┄	2.2	V
Reverse current	V=10V	┄	┄	2	μm
Wavelength	If=20mA	565	┄	575	nm
Half wave width	If=20mA	┄	10	┄	nm

·Light intensity characters
Brightness code	LA	LB	LC	LD	LE	LF	LG	LH
IV(mcd)	10-15	15-20	20-25	25-30	30-35	35-40	40-50	50-60

Source:PAM-XIAMEN

If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or[email protected].

2014-11-04 algainp laser diode, algainp led structure, algainp uhb-led

InGaAsP/InGaAs on InP substrates

InGaAsP/InGaAs on InP substrates We provide InGaAsP/InGaAs epi on InP substrates as follows: Structure1: 1.55um InGaAsP QW laser No. Layer Doping 0 InP Substrate S-doped, 2E18/cm-3 1 n-InP buffer 1.0um, 2E18/cm-3 2 1.15Q-InGaAsP waveguide 80nm,undoped 3 1.24Q-InGaAsP waveguide 70nm,undoped 4 4×InGaAsP QW（+1%） 5×InGaAsP Barrier 5nm 10nm PL:1550nm 5 1.24Q-InGaAsP waveguide 70nm,undoped 6 1.15Q-InGaAsP waveguide 80nm,undoped 7 InP space layer 20nm,undoped 8 InP 100nm,5E17 9 InP 1200 nm, 1.5E18 10 InGaAs 100 nm, 2E19 Specification of Structure1: 1) Method: MOCVD 2) Size of wafer: 2” 3) InGaAsP/InGaAs growth on [...]

2014-11-21meta-author InGaAsP/InGaAs on InP substrates

WS2 Crystal

PAM XIAMEN offers WS2 Crystal. WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2. WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]

2019-05-20meta-author

PAM-XIAMEN Offers AlGaN material

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to [...]

2017-11-08meta-author

Au – Gold Single Crystal & Substrate

PAM XIAMEN offers Gold Single Crystal & Substrate. PAM XIAMEN grows Gold single crystal along <111> direction upto 20 mm diameter by Modified bridgman method. The Gold single crystal subsrtae is cut from the Gold ingot and polished to 30A surface roughness. Au (Gold) [...]

2019-05-08meta-author

8″CZ Prime Silicon Wafer-1

PAM XIAMEN offers 8″CZ Prime Silicon Wafer With Notch It will be carried out after the silicon ingot is made. A flat angle is cut on the silicon ingot below 200 mm, which is called flat. In order to reduce waste, only a small round hole [...]

2020-06-15meta-author

From graphene to silicon carbide: ultrathin silicon carbide flakes

This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of [...]

2019-01-09meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification

Share this post

Related Posts

InGaAsP/InGaAs on InP substrates

WS2 Crystal

PAM-XIAMEN Offers AlGaN material

Au – Gold Single Crystal & Substrate

8″CZ Prime Silicon Wafer-1

From graphene to silicon carbide: ultrathin silicon carbide flakes

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers