AlGaN template structure report

AlGaN template structure report

A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact resistivity testing equipment,micropipe density by polarizing microscope, orientation by X-ray Orientator etc. if the wafers meet the requirement, we will clean and pack them in 100 class clean room, if the wafers do not match the custom spec, we will take it off.

Below is an example of AlGaN template structure:

AlGaN template structure

For more information, please visit our website: https://www.powerwaywafer.com,

send us email at [email protected] or [email protected].

2018-08-14

Single-emitter LD Chip 808nm @8W

PAM XIAMEN offers Single-emitter LD Chip 808nm @8W. Brand: PAM-XIAMEN Wavelength: 808nm Stripe width: 350um Output Power: 8W Cavity Length:2.5mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]

2019-05-09meta-author

La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3

PAM XIAMEN offers La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3 . 20nmLa0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 films on Nb:SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp ,wt 0.7% Specifications: Film: La0.7Sr0.3MnO3 (20nm) + PbZr0.2Ti0.8O3 (100nm) Substrate:Nb: SrTiO3 (100), wt 0.7% Size: 5x5x0.5mm, one side polished For more information, please visit our website: https://www.powerwaywafer.com, send us [...]

2019-04-28meta-author

How to Improve the Reliability of Silicon Carbide Power Devices’ Technology in Terms of the Material?

– How to Improve the Reliability of Silicon Carbide Materials? The silicon carbide industry chain includes silicon carbide powder, silicon carbide ingots, silicon carbide substrates, silicon carbide epitaxy, silicon carbide wafers, silicon carbide chips and silicon carbide device packaging. Among them, substrate, epitaxial wafer, wafer, [...]

2021-04-07meta-author

Si+SiO2+Ti( or TiO2)+Pt Thin Film

PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film. Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm) SiO2+Ti+Pt(111) thin film on Si substrate ,10x10x0.525mm,1sp P-type B-doped,( SiO2=300nm,Ti=10nm ,Pt(111)=150nm) SiO2+Ti+Pt(111) thin [...]

2019-04-29meta-author

CZT γ-ray Multi-pixel Imaging System

CZT γ-ray multi-pixel imaging system of PAM-XIAMEN adopts a imaging module of multi-pixel energy spectrum. It can be spliced into a 5×5 array without any blind spots. A total of 6,400 pixels make up a 127x127mm CZT (Cadmium Zinc Telluride) detector square. The system can [...]

2021-07-19meta-author

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Highlights •Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice. •Emphasis on understanding the inconclusive crystalline morphology at initial layers. •Observed low TD in HRTEM and low RMS in AFM. •Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD. •SAEDP shows fcc [...]

2015-08-10meta-author gaas epi wafer, gaas on si

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

AlGaN template structure report

AlGaN template structure report

Share this post

Related Posts

Single-emitter LD Chip 808nm @8W

La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3

How to Improve the Reliability of Silicon Carbide Power Devices’ Technology in Terms of the Material?

Si+SiO2+Ti( or TiO2)+Pt Thin Film

CZT γ-ray Multi-pixel Imaging System

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(1 0 0)

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers