We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of −100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm−1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm−1, respectively. The maximum transconductance of the proposed device was 102.9 mS mm−1, while those of the conventional devices were 97.8 and 101.9 mS mm−1. The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.
PAM XIAMEN offers Middium and Small Size Photomask. Chromium Plate Accuracy (Standard Size:6inch Quartz) Accuracy/Grade Max Accuracy High-precision Medium accuracy General accuracy Min.Line/Space Width 0.75μm/0.75μm 3μm/3μm 5μm/5μm 10μm/10μm CD Control ±0.1μm ±0.3μm ±0.5μm ±1.0μm Total Pitch Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Registration Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Overlay Accuracy ±0.25μm ±0.5μm ±0.75μm ±1.0μm Orthogonality ±0.5μrad ±0.75μrad ±1.0μrad ±2.0μrad Chrome Plate Material (Photomask Blank Plate) Material Soda Lime Glass、Quartz Max. Size 3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″ Normal Size 1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm Thickness 6.35±0.2mm (QZ) Film Type Low Reflectance Chrome Optical Density(λ=450nm) Between Plates3.0±0.3 In Plate±0.3 Reflectivity(λ=436nm) Between Plates10±5% In Plate±2% Main application areas: 1. IC Bumping, [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Si 3″ P/P SEMI TEST (Unsealed)t Si 3″ P/P SEMI TEST (Unsealed)t n-type Si:P  ±0.1° 3″ 380 P/E FZ >5,000 SEMI Test, Bad Lasermark on back. To use with chuck light polish needed on back n-type Si:P  3″ 381 P/P FZ 100-500 SEMI Prime n-type Si:P  3″ 300 P/E FZ 61-95 Prime, NO Flatst Intrinsic Si:-  3″ 300 P/P FZ >20,000 Prime, NO Flats, Individual cst Intrinsic Si:-  ±0.5° 3″ 1975 P/P FZ >20,000 Prime, NO Flats, Individual cst p-type Si:B  3″ 380 P/E 1-10 1 F @ <1,-1,0> p-type Si:B  3″ 380 P/P 80-170 SEMI Prime p-type Si:B  3″ 300 P/P 30-35 SEMI Prime p-type Si:B  3″ 200 P/E 10-20 SEMI [...]
Computer modeling of surface interactions and contaminant transport in microstructures during the rinsing of patterned semiconductor wafers
Computer modeling of surface interactions and contamin Highlights • Dynamics of contaminant removal from the surface of micro/nanotrench is simulated. • The trench is rectangular and made of one or two different materials. • Various diffusivities and surface characteristics are considered in the model. • In multimaterial trench, cleaning dynamics strongly depends on [...]
CZT Photon Counting Linear Array Detector PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging. Specification Size 16 pixels 32 pixels Detector crystal CdZnTe Crystal Density 5.8g/cm3 Volume resistivity >1010Ω.cm Dimension 16.6×4.4mm2 12.9×4mm2 Thickness 2.0mm Pixel array 16×1 32×1 Pixel size 0.9×2.0mm2 0.3×0.3mm2 Electrode material Au Standard working voltage 450V Max. working voltage 600V Single pixel leakage current <0.1nA <0.01nA Max. counting rate >0.7Mcps/mm2 >8.0Mcps/mm2 Operation temperature 15℃~35℃ Storage temperture 10℃~40℃ Storage [...]
InSb Epi Wafer Xiamen Powerway offers InSb Epi Wafer with Homogeneous Structure and Hetero-structure: Substrate: InSb, Thickness: 500um, Te doped with doping concentration of 3.4E18cm-3 1st Layer: InSb, Thickness: 4000nm, Si doped (n+) with doping concentration of 3.0E18cm-3 2nd Layer: InSb, Thickness: 250nm, Si doped (n-) with [...]
PAM XIAMEN offers Zinc Oxide on Silicon. The following wafers work Thermal oxide Layer Research Grade , about 80 % useful area SiO2 layer on 4″ Silicon wafer Dry Oxide layer thickness: 100 nm ( 2000A) +/-10% Growth method – Dry oxidizing at 1000oC Refractive index – 1.455 Note: customized oxide layer [...]