PAM XIAMEN offers YSZ （Y2O3 stabilized ZrO2）single crystal wafer.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ Substrates (100)
1、Square YSZ (100) [...]

2019-05-21meta-author

PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
75 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
136 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
20
n- Si:P
300±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
21
n- Si:P
400±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
12.5±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.08 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.005-0.020
P/E
25
n- Si:P
0.04 ±10%
N/N+
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
37.5
n- Si:P
270 ±10%
N/N+
4″Øx400μm
n- Si:Sb[111]
0.006-0.020
P/E
37.5
n- Si:P
85±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
58
n- Si:P
60±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
8±10%
N/N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
5
n- Si:P
3±10%
N/N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
60
n- Si:P
40.5±4.5
N/N/N+
4″Øx460μm
n- Si:Sb[111]
0.007-0.020
P/E
20
n- Si:P
10±2
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- Si:P
58.75 ±10%
N/N+
4″Øx525μm
n- Si:Sb[111]
0.005-0.020
P/E
60
n- [...]

2019-03-08meta-author

PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
Intrinsic Si:-
[211] ±0.1°
4″
275
P/P
FZ >3,000
SEMI Prime, TTV<2μm
Intrinsic Si:-
[111] ±0.5°
4″
500
P/P
FZ >25,000
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
525
P/E
4-6
SEMI Prime, 2 Flats at [111], Secondary 70.5° CW from PF
p-type Si:B
[110]
4″
525
P/E
2-10
PF<111> SF 109.5°
p-type Si:B
[100]
4″
300
P/E
800-5,400
SEMI Prime
p-type Si:B
[100]
4″
500
P/P
10-20
SEMI Prime
p-type Si:B
[100]
4″
3000
P/E/P
10-15
SEMI Prime, Individual cst
p-type Si:B
[100-6°]
4″
250
P/E
8-12
SEMI Prime
p-type Si:B
[100]
4″
275
P/P
7-14
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
300
P/E
7-14
SEMI Prime, TTV<5μm
p-type [...]

2019-03-05meta-author

PAM XIAMEN offers YAlO3 Single crystal.
YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching.
Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]

2019-05-21meta-author

PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]

2019-07-05meta-author

PAM XIAMEN offers8″ Silicon Wafer-3
Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Notch SEMI STD
Chamfer width 250-350μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
With more than 25+years experiences in compound semiconductor material field and [...]

2019-09-20meta-author