We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of −100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm−1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm−1, respectively. The maximum transconductance of the proposed device was 102.9 mS mm−1, while those of the conventional devices were 97.8 and 101.9 mS mm−1. The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.
New AlGaN/GaN HEMTs employing both a floating gate and a field plate
Related Posts
Ti: Sapphire Crystal
PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
4″ Silicon EPI Wafer-3
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±0.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28.5 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 11 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 9-11 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 8-12 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 4±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 5 n- Si:P 1.5±10% N/N/N/N+ 4″Øx525μm n- [...]
InGaAs SWIR Detector
SWIR (short wave infrared) detector is widely used in aerospace remote sensing, low-light night vision, medical diagnosis, agricultural industry, security monitoring and other fields. The short-wave infrared InGaAs detector has the characteristics of high detection rate, high uniformity and high stability, and is one [...]
Silicon on Sapphire (SOS) Introduction – Can’t Offer Temporarily
The SOS technology uses single crystal sapphire or spinel insulator material as the substrate and grows a single crystal silicon film through a high-temperature epitaxy process to fabricate semiconductor integrated circuits. It is a kind of SOI CMOS technology. The silicon on sapphire structure [...]
Metal Impurity Content Identified in Mono and Polycrystalline Silicon Crystals
The impurity elements in crystalline silicon materials mainly include non-metallic impurities such as carbon, oxygen, boron, and phosphorus, and metal impurity such as iron, aluminum, copper, nickel, and titanium. Metal impurities generally exist in interstitial states, substitution states, complexes or precipitations in crystalline silicon, [...]
4″ Silicon EPI Wafer-5
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 8±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 5 n- Si:P 3±10% N/N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 20 n- Si:P 10±2 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- [...]