We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT was reduced successfully due to an increase in the number of depletion region edges. The breakdown voltage of the proposed AlGaN/GaN HEMT was 1106 V, while those of the conventional devices with only an FP or FG were 688 and 828 V, respectively. The leakage current of the proposed AlGaN/GaN HEMTs was 1.68 μA under a reverse bias of −100 V while those of the conventional devices with only an FP or FG were 3.21 and 1.91 μA, respectively, under the same condition. The forward electric characteristics of the proposed and conventional AlGaN/GaN HEMTs are similar. The maximum drain current of the proposed AlGaN/GaN HEMTs was 344 mA mm−1 while those of the conventional devices with only an FP or FG were 350 and 357 mA mm−1, respectively. The maximum transconductance of the proposed device was 102.9 mS mm−1, while those of the conventional devices were 97.8 and 101.9 mS mm−1. The breakdown voltage and the leakage current of the proposed device were improved considerably without sacrificing the forward electric characteristics. It should be noted that there were no additional processing steps and mask levels compared to the conventional FP process.
New AlGaN/GaN HEMTs employing both a floating gate and a field plate
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. <=1″ diameter wafers [...]
We specialize in providing antimonide wafers, like InSb wafer: https://www.powerwaywafer.com/compound-semiconductor/insb-wafer.html. In addition, we will offer technology support for you. Here we share a paper “New Process Results in Smoother Indium Antimonide Substrates”, which is about modified chemomechanical polishing of InSb wafer. Reprinted from: spie.org Published by: Patrick [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at [email protected] if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2434 p–type Si:B  ±0.25° 4″ 525 P/E 5–10 SEMI Prime, 2Flats, Empak cst PAM2435 p–type Si:B  ±0.5° 4″ 380 P/P 1–30 SEMI Prime, Primary Flat @ ±0.25°, SFlat @ ±5° (109.5° CW from PFlat), Empak cst PAM2436 p–type Si:B  ±0.5° 4″ 750 P/E 1–100 SEMI Prime (back–side [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-8 Diameter: 150 mm N type Orientation: (100) Thickness: 675±10μm Resistivity 6,000-10,000Ωcm Double Side Polished For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Soda Lime Glass Window. Please send us email at [email protected] if you need other specs and quantity. Applications where too much heat build up is a problem Hot mirrors to reflect Infrared and Transmitting Visible Light Cold mirrors for trasmitting Infrared (IR) and [...]
You can buy fused silica quartz wafer from PAM-XIAMEN. It is usually made by smelting, cutting and grinding quartz, and the silica content of fused quartz wafer can reach more than 99.99%. The quartz hardness is seven on the Mohs scale, and it has the characteristics of high [...]