PAM XIAMEN offers 2″ FZ Prime Silicon Wafer.
Si wafer
Dia 2” x 260μm
FZ
(111)
Type n doped P
R > 300 ohm.cm
2 side spolished
With flats
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-01meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE
We have investigated the dependence of the conductive layer width and Hall mobility in n-GaAs/LT-GaAs structures on the conditions of low temperature (LT) buffer growth and on annealing parameters. Both the [...]
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
A client of our recently requested a substrate that would help them with their research experiement.
“My experiment is to synthesize the novel magnesium biomaterials on the polyelectrolyte multilayer modified silicon wafer. The wafer would be similar with the [...]
2019-02-26meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2841
Intrinsic Si:-
[100]
4″
300
P/E
FZ 16,000-20,000
SEMI Prime, 1Flat, Empak cst, Back-side polish is imperfect
PAM2842
Intrinsic Si:-
[100]
4″
500
P/E
FZ 13,000-20,000
SEMI Prime, 1Flat, Empak cst, TTV<5μm, [...]
2019-02-22meta-author
