Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample and it is caused by a trapping mechanism. A constant measurement of the Rsheet can be obtained under illumination. Thus, two parameters deserve measurement for an efficient screening of a technology: Rsheet under light and ΔRsheet in obscurity.

Highlights

•We study the dispersion in the Rsheet measurement.

•We study the light influence on the Rsheet measurement.

•We deduce a trapping mechanism in the AlGaN/GaN stack.

•We simulate the trapping phenomenon.

Source: Microelectronic Engineering

If you need more information about Sheet resistance measurement on AlGaN/GaN wafers and dispersion study, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]

2013-09-15 AlGaN/GaN HeMT, AlGaN/GaN wafers, Light, Sheet resistance

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