Polishing Wafer
PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a [...]
2018-08-07meta-author
Sic Chips
PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
1.PAM200508-SIC-AU
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Grade: dummy
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
2. SiC Wafer with thermal [...]
2020-07-17meta-author
What is silicon made of?
Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand.
First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out [...]
Gartner: worldwide semiconductor revenue declined 2.3% in 2015
Worldwide semiconductor revenue totaled 334.8 billion dollar in 2015, a 2.3 percent decline from 2014, according to final results by Gartner. The combined revenue of the top 25 semiconductor vendors fell by 0.5 percent during 2015. This was [...]
2016-07-04meta-author
Progress in bulk GaN growth*
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of [...]
2018-05-29meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-111
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-111
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-110
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-110
1-20
500-550
P/E
PRIME
100
Any
Any
CZ
Any
Any
350-600
P/E
TEST
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
Undoped
VGF
-100
>1E7
500-600
P/P
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
P
Zn
VGF
(100) off 2 deg twd <110>
0.01
375-425
P/E
epi
100
P
Zn
VGF
-100
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
100
Si
Undoped
VGF
-100
10000000
610-660
P/P
EPI
100
Undoped
CZ
-100
>30
450-500
P/P
EPI
100
Undoped
CZ
-100
>30
500-550
P/E
EPI
100
N
Sb
CZ
(100)-9
<.4
150-200
P/E
EPI
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
EPI
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
EPI
100
P
Ga
CZ
-100
.01-.04
450-500
P/P
EPI
100
P
Ga
CZ
-100
.01-.04
500-550
P/E
EPI
100
N
Si
VGF
-100
600-650
P/E
PRIME
100
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
100
Single Wafer Shipper
ePak
Holds1Wafer
PRIME
100
Shipping Cassette
ePak
Holds25Wafers
Clean Room
101.6
N
Phos
CZ
-100
1-20
300-350
P/P
101.6
N
Phos
CZ
-100
1-20
350-400
P/E
101.6
P
Boron
CZ
-100
1-20
300-350
P/P
101.6
P
Boron
CZ
-100
1-20
350-400
P/E
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-03-04meta-author