PAM XIAMEN offers high-quality AlN Single Crystal Substrate& Template.
AlN Ceramic Substrates
AlN ceramic substrates are fabricated by tape casting technology. Its thermal conductivity is 4-5 times higher than Al2O3. It is an ideal substrate for electronic thick and thin film applications.
| Aluminum Nitride Ceramic Substrates Properties | |||||
| Item No. | AlN-140 | AlN-170 | AlN-180 | AN5113 | AN5116 |
| Purity (wt%) | 0.99 | 0.99 | 0.99 | 0.98 | 0.99 |
| Density (g/cm3) | 3.24 | 3.31 | 3.31 | >3.25 | >3.26 |
| Thermal Conductivity (W/m. K) | 140+/-10 | >=170 | 180+/-10 | 100-300 | >170 |
| Thermal Expansion (x10-6/oC) | < 5.6 | 4.4 | < 5.6 | <4.3 | <4.2 |
| Dielectric Strength (Kv/mm) | >=25 | >=15 | >20 | >15 | >15 |
| Dielectric Constant (at 1MHZ) | 8.6 | 9 | 8.6 | 8.7 | 8.7 |
| Loss Tangent (x104@1 MHz) | 5 | 2 | 5 | 43531 | 43531 |
| Volume Resistivity (ohm-cm) | >1012 | >1014 | >5×1012 | >1014 | >1014 |
| Flexural Strength (Kgf/mm2) | 35.7 | >35.7 | > 30.6 | >25 | >30 |
| Surface Roughness (micron) in Ra | as polished: 0.05 um or 2 microinch in Ra | as polished: 0.1 um or 4 microinch in Ra | as fired: 0.3 as lapped: 0.075 as polished: 0.025 | as fired: 0.3 as lapped: 0.075 as polished: 0.025 | |
AlN Ceramic Substrate 1″x1″x 0.5mm, 1SP
AlN Ceramic Substrate 10x10x 0.5mm, 1SP – ALN-101005s1
AlN Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides,
AlN Ceramic Substrate 2″x2″x 0.5mm, 2SP
AlN Ceramic Substrate 2″x2″x 1.0 mm, as lapping
AlN Ceramic Substrate 2″x2″x0.254mm, as lapped, 5 sheets/pack
0.04” Thick Graphite Substrate for RTP Furnace’s Sample Holder, 3” or 5” O.D Selectable – EQ-G-Holder
3” Dia x 0.025” Thick Aluminum Nitride Substrate for RTP Furnace’s Sample Holder – EQ-AIN-Holder
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.