AlN Single Crystal Substrate& Template

PAM XIAMEN offers AlN Single Crystal Substrate& Template.

AlN Single crystal

AlN Single Crystal Substrate <0001>,10x10x0.45mm, 2SP
AlN Single Crystal Substrate <0001>,5x5x0.45mm, 2SP

AlN Template on Silicon

Undoped AlN Template on Silicon ( Si <111> P type ) 5mmx5mm x 200 nm
Undoped AlN Template on Silicon ( Si <111> P type ) 10mmx10mm x 200 nm
AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Undoped AlN Template on 2″ Silicon ( Si <111> N type ) 2″x 500 nm
Undoped AlN Template on 2″ Silicon ( Si <111> , N type ) 2″x 200 nm
Undoped AlN Template on 4″ Silicon ( Si, on <111> P type ) 4″x 200 nm

AlN Ceramic Substrates

                                                         Aluminum Nitride Ceramic Substrates Properties
Purity (wt%) 0.99 0.99 0.99 0.98 0.99
Density (g/cm3) 3.24 3.31 3.31 >3.25 >3.26
Thermal Conductivity (W/m. K) 140+/-10 >=170 180+/-10 100-300 >170
Thermal Expansion (x10-6/oC) < 5.6 4.4 < 5.6 <4.3 <4.2
Dielectric Strength (Kv/mm) >=25 >=15 >20 >15 >15
Dielectric Constant (at 1MHZ) 8.6 9 8.6 8.7 8.7
Loss Tangent (x104@1 MHz) 5 2 5 43531 43531
Volume Resistivity (ohm-cm) >1012 >1014 >5×1012 >1014 >1014
Flexural Strength (Kgf/mm2) 35.7 >35.7 > 30.6 >25 >30
Surface Roughness (micron) in Ra   as polished: 0.05 um or 2 microinch in Ra as polished: 0.1 um or 4 microinch in Ra as fired: 0.3 
as lapped: 0.075
as polished: 0.025 
as fired: 0.3 
as lapped: 0.075 
as polished: 0.025

AlN Ceramic Substrate 1″x1″x 0.5mm, 1SP
AlN Ceramic Substrate 10x10x 0.5mm, 1SP – ALN-101005s1
AlN Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides,
AlN Ceramic Substrate 2″x2″x 0.5mm, 2SP
AlN Ceramic Substrate 2″x2″x 1.0 mm, as lapping
AlN Ceramic Substrate 2″x2″x0.254mm, as lapped, 5 sheets/pack
0.04” Thick Graphite Substrate for RTP Furnace’s Sample Holder, 3” or 5” O.D Selectable – EQ-G-Holder
3” Dia x 0.025” Thick Aluminum Nitride Substrate for RTP Furnace’s Sample Holder – EQ-AIN-Holder

AlN Template on Sapphire

AlN templates, e.g. AlN epitaxial thin film on single crystal substrate, is the New Wave in Nitride Semiconductor Materials, which provides the most cost-effective solution to grow high quality III-V nitride thin film. 

AlN Single Crystal Substrate <0001>,10x10x0.45mm, 2SP
AlN Single Crystal Substrate <0001>,5x5x0.45mm, 2SP
Undoped AlN Template on Sapphire, 2″x1000nm t- two sides polished
Undoped AlN Template on Sapphire 10x10mmx1000nm
Undoped AlN Template on Sapphire 10x10mmx5000nm
Undoped AlN Template on Sapphire 2″Dia. x1000nm thick,one side polished
Undoped AlN Template on Sapphire 5x5x0.5mm,1sp ,film: 1000nm
AlN Template on Sapphire, 2″x 5000 nm
AlN Template on Sapphire 4″x 1000 nm
AlN Template on Sapphire , 4″x 5000 nm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Share this post