PAM XIAMEN offers AlN Single Crystal Substrate& Template.
AlN Single crystal
AlN Single Crystal Substrate <0001>,10x10x0.45mm, 2SP
AlN Single Crystal Substrate <0001>,5x5x0.45mm, 2SP
AlN Template on Silicon
Undoped AlN Template on Silicon ( Si <111> P type ) 5mmx5mm x 200 nm
Undoped AlN Template on Silicon ( Si <111> P type ) 10mmx10mm x 200 nm
AlN Template on 4″ Silicon ( Si <111>, P type, B-doped ) 4″x 500 nm
Undoped AlN Template on 2″ Silicon ( Si <111> N type ) 2″x 500 nm
Undoped AlN Template on 2″ Silicon ( Si <111> , N type ) 2″x 200 nm
Undoped AlN Template on 4″ Silicon ( Si, on <111> P type ) 4″x 200 nm
AlN Ceramic Substrates
| Aluminum Nitride Ceramic Substrates Properties | |||||
| Purity (wt%) | 0.99 | 0.99 | 0.99 | 0.98 | 0.99 |
| Density (g/cm3) | 3.24 | 3.31 | 3.31 | >3.25 | >3.26 |
| Thermal Conductivity (W/m. K) | 140+/-10 | >=170 | 180+/-10 | 100-300 | >170 |
| Thermal Expansion (x10-6/oC) | < 5.6 | 4.4 | < 5.6 | <4.3 | <4.2 |
| Dielectric Strength (Kv/mm) | >=25 | >=15 | >20 | >15 | >15 |
| Dielectric Constant (at 1MHZ) | 8.6 | 9 | 8.6 | 8.7 | 8.7 |
| Loss Tangent (x104@1 MHz) | 5 | 2 | 5 | 43531 | 43531 |
| Volume Resistivity (ohm-cm) | >1012 | >1014 | >5×1012 | >1014 | >1014 |
| Flexural Strength (Kgf/mm2) | 35.7 | >35.7 | > 30.6 | >25 | >30 |
| Surface Roughness (micron) in Ra | as polished: 0.05 um or 2 microinch in Ra | as polished: 0.1 um or 4 microinch in Ra | as fired: 0.3 as lapped: 0.075 as polished: 0.025 |
as fired: 0.3 as lapped: 0.075 as polished: 0.025 |
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AlN Ceramic Substrate 1″x1″x 0.5mm, 1SP
AlN Ceramic Substrate 10x10x 0.5mm, 1SP – ALN-101005s1
AlN Ceramic Substrate 114.3mm x114.3mm x 0.5mm, as lapped on both sides,
AlN Ceramic Substrate 2″x2″x 0.5mm, 2SP
AlN Ceramic Substrate 2″x2″x 1.0 mm, as lapping
AlN Ceramic Substrate 2″x2″x0.254mm, as lapped, 5 sheets/pack
0.04” Thick Graphite Substrate for RTP Furnace’s Sample Holder, 3” or 5” O.D Selectable – EQ-G-Holder
3” Dia x 0.025” Thick Aluminum Nitride Substrate for RTP Furnace’s Sample Holder – EQ-AIN-Holder
AlN Template on Sapphire
AlN templates, e.g. AlN epitaxial thin film on single crystal substrate, is the New Wave in Nitride Semiconductor Materials, which provides the most cost-effective solution to grow high quality III-V nitride thin film.
AlN Single Crystal Substrate <0001>,10x10x0.45mm, 2SP
AlN Single Crystal Substrate <0001>,5x5x0.45mm, 2SP
Undoped AlN Template on Sapphire, 2″x1000nm t- two sides polished
Undoped AlN Template on Sapphire 10x10mmx1000nm
Undoped AlN Template on Sapphire 10x10mmx5000nm
Undoped AlN Template on Sapphire 2″Dia. x1000nm thick,one side polished
Undoped AlN Template on Sapphire 5x5x0.5mm,1sp ,film: 1000nm
AlN Template on Sapphire, 2″x 5000 nm
AlN Template on Sapphire 4″x 1000 nm
AlN Template on Sapphire , 4″x 5000 nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.