Aluminium Gallium Arsenide Epi Wafer

Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy between GaAs and AlAs. The AlGaAs should be considered an abbreviated form of the chemical formula, instead of any particular ratio.

The aluminium gallium arsenide bandgap is 1.42 eV (GaAs) ~2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The refractive index of Aluminium gallium arsenide is 2.9 (x = 1) ~3.5 (x = 0). Due to the properties of aluminium gallium arsenide, the AlGaAs material can be used for the construction of Bragg mirrors in VCSELs and RCLEDs. You can buy gallium aluminum arsenide epitaxy with following structures, or you can offer PAM-XIAMEN your GaAs epi structure to customize:

1. Epitaxial Wafer Structures of AlGaAs Epitaxial Wafer

1.1 AlGaAs/GaAs Wafer Structure

PAM190529-ALGAAS

GaAs (10 nm)
AlGaAs (100 nm) with 30% Al and 70% Ga, doped at 1E18 cm^-3
Undoped AlGaAs (15 nm) (30% Al and 70% Ga)
GaAs (500 nm)
GaAs substrate
Remark: we can test mobility and 2DEG concentration.

1.2 AlGaAs/InGaAs/GaAs HEMT wafer 

PAM190510-HEMT

Material Thickness,nm Dopant concentration
GaAs-wafer,(625+25)
um
GaAs 200
GaAs/Ao.23Gao.77As (2/2)x10
GaAs 200
lno18Gao82As 12
GaAs 1.5
Alo.23G.77As 3
Si 12 -2
3.2*10 cm
Alo.23Gao.77As 12 16 -3
5.0*10 cm
n-GaAs 7 16.m-3
5.0*10 cm
n+AlogGao1As 3 18 -3
2.0*101 cm
n+GaAs 60 18 -3
6.0*10 cm

 

1.3 3” Diameter AlGaAs/GaAs Epi Structure (PAM170830-ALGAAS)

Layer No. Composition Thickness
1 n-GaAs (1×1019 cm-3, Si)
2 AlxGa1-xAs (uid) 400nm
3 GaAs Substrate

 

1.4 Dia. 3″ Aluminium Gallium Arsenide Epi-wafer (PAM170830-ALGAAS)

Layer No. Composition Thickness
1 p-GaAs(-cm-3, Zn or C) 100nm
2 p-Al0.3Ga0.7As(-cm-3, Zn or C)
3 n-GaAs(-cm-3, Si) 40nm
4 AlxGa1-xAs (uid)
5 GaAs Substrate

 

 

Aluminium gallium arsenide epi wafer

Aluminium gallium arsenide epi wafer

 

 

 

 

 

 

 

 

 

 

1.5 Al rich AlxGa1−xAs

PAM200827-EPI

Al content x=0.5, 0.6, 0.8. Al-rich AlxGa1−xAs wafers on GaAs substrate,

Size: 2”

Thickness:500nm

Remark: High Mobility:~6000cm2/V.s, 2DEG density- Ns:2-3E12/cm2

2. Application of Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide wafer is used for GaAs-based heterostructure devices such as quantum well infrared photodetector (QWIP), VCSELs, RED LED, red double-hetero-structure laser diodes or HEMT devices. The aluminium gallium arsenide LED with an active layer of Ga1-xAlxAs emits the red light.

For more information, please contact us email at [email protected] and [email protected]

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