Aluminium Gallium Arsenide Epi Wafer

Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy between GaAs and AlAs. The AlGaAs should be considered an abbreviated form of the chemical formula, instead of any particular ratio.

The aluminium gallium arsenide bandgap is 1.42 eV (GaAs) ~2.16 eV (AlAs). For x < 0.4, the bandgap is direct. The refractive index of Aluminium gallium arsenide is 2.9 (x = 1) ~3.5 (x = 0). Due to the properties of aluminium gallium arsenide, the AlGaAs material can be used for the construction of Bragg mirrors in VCSELs and RCLEDs. You can buy gallium aluminum arsenide epitaxy with following structures, or you can offer PAM-XIAMEN your GaAs epi structure to customize:

1. Epitaxial Wafer Structures with AlGaAs Thin Film

1.1 AlGaAs/GaAs Wafer Structure


GaAs (10 nm)
AlGaAs (100 nm) with 30% Al and 70% Ga, doped at 1E18 cm^-3
Undoped AlGaAs (15 nm) (30% Al and 70% Ga)
GaAs (500 nm)
GaAs substrate
Remark: we can test mobility and 2DEG concentration.

1.2 AlGaAs/InGaAs/GaAs HEMT wafer 


Material Thickness,nm Dopant concentration
GaAs 200
GaAs 1.5
Al0.23Ga0.77As 12 5.0*10^16 cm^-3
n+Al0.9Ga0.1As 3
n+GaAs 6.0*10^18 cm^-3


1.3 3” Diameter AlGaAs/GaAs Epi Structure (PAM170830-ALGAAS)

Layer No. Composition Thickness
1 n-GaAs (1×1019 cm-3, Si)
2 AlxGa1-xAs (uid) 400nm
3 GaAs Substrate


1.4 Dia. 3″ Aluminium Gallium Arsenide Epi-wafer (PAM170830-ALGAAS)

Layer No. Composition Thickness
1 p-GaAs(-cm-3, Zn or C) 100nm
2 p-Al0.3Ga0.7As(-cm-3, Zn or C)
3 n-GaAs(-cm-3, Si) 40nm
4 AlxGa1-xAs (uid)
5 GaAs Substrate



Aluminium gallium arsenide epi wafer

Aluminium gallium arsenide epi wafer











1.5 Al rich AlxGa1−xAs


Al content x=0.5, 0.6, 0.8. Al-rich AlxGa1−xAs wafers on GaAs substrate,

Size: 2”


Remark: High Mobility:~6000cm2/V.s, 2DEG density- Ns:2-3E12/cm2

1.6 AlGaAs Epitaxial Wafer with Quantum Dots for Random Number Generator

PAM210918 – EPI

Layer No. Material Thickness Dopant Number of repetitions of layers Note
10 GaAs  
9 AlxGa1-xAs  
8 AlxGa1-xAs  
7 GaAs undoped  
6 InxGa1-xAs The peak value of photoluminescence should be in the spectral range of 1100±80nm. DBR reflection spectrum center error + – 30nm
5 GaAs
4 GaAs  
3 AlxGa1-xAs  
2 AlxGa1-xAs  
1 GaAs ~300nm  
0 SI GaAs Substrate        


2. Application of Aluminium Gallium Arsenide Epi Wafer

Aluminium gallium arsenide wafer is used for GaAs-based heterostructure devices such as quantum well infrared photodetector (QWIP), VCSELs, RED LED, red double-hetero-structure laser diodes, HEMT devices, Hall sensors and etc. The aluminium gallium arsenide LED with an active layer of Ga1-xAlxAs emits the red light.

For more information, please contact us email at and

Share this post