

CZT Planar Detector PAM-P01(CZT Planar Detector) series are developed from CZT planar detector. Benefit from advanced CZT technology, we has developed CZT planar detectors with energy resolution<7% or 7%~10% @59.5keV under 25deg. for dose counting, spectrum acquisition and imaging for dosimeter, spectrometer and nuclear medicine. 1.Specification [...]
PAM XIAMEN offers WSe2 Crystal. WSe2 (Tungsten Diselenide) is a very stable semiconductor in the group-VI transition metal dichalcogenides. WSe2 photoelectrodes are stable in both acidic and basic conditions, making them potentially useful in electrochemical solar cells. Also, the material can be changed from [...]
PAM XIAMEN offers Zero Diffraction Si Wafer Diameter 32mm for XRD measurements Zero Diffraction Plate 32 mm Dia. x Thickness 2.0 mm Si Crystal for XRD sample with below specifications Resistivity>1Ωcm Size: 32 mm diameter x 2.0 mm thickness Surface: double side optical polished Zero diffraction plate is made of [...]
A Plane Si-GaN Freestanding GaN Substrate PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-SI Dimension 5 x 10 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) > 10 6Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
The behaviour of n-6H SiC in HF- and KOH-based electrolytes is studied. It is shown that at the room temperature the dissolution of SiC in these electrolytes is accompanied by a number of side effects, such as passivation of the etched surface with an [...]
PAM XIAMEN offers 4″ Si wafer Thickness:500±20μm. 4″ Si wafer 4″ Si, N-type, <100>, SSP resistivity3000-4000Ωcm thickness500±20μm carrier lifetime>1ms(1000μm) For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) [...]