2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us


Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us


Recent News

P Type Boron Doped Silicon Epitaxial Wafer

At present, P-P+ (boron doped) silicon epitaxial wafers are widely used in the manufacture of large-scale integrated circuits and [...]

P نوع الركيزة أشباه الموصلات فوسفيد الإنديوم

Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials [...]

رقاقة ديود ليزر 405nm GaN

Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band [...]

خدمات تصنيع GaN لأجهزة HEMT

PAM-XIAMEN supplies GaN HEMT epitaxial wafers and GaN fabrication services. Our GaN fabrication services supplied include front-end process and [...]

خدمات مسبك GaN لتصنيع LED

PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The [...]

رقاقة ليزر عالية الطاقة 1060 نانومتر

InGaAs quantum well (QW), as a commonly used two-dimensional material in near-infrared band, has important applications in semiconductor lasers, [...]

هيكل InGaAs Photodiode

Ternary compound semiconductor material InxGa1-xAs is a mixed solid solution formed by GaAs and InAs. It is a sphalerite [...]

AlGaN UV LED رقاقة

AlGaN is a direct wide band gap semiconductor material. By changing the composition of AlGaN material, the band gap [...]

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