PAM XIAMEN offers Cr – Foil and Substrate.
Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1
Polycrystal Cr ( Chromium ) metallic substrate
Purity: > 99.99%
Substrate dimension: 10×10 x 1.0 mm,
Surface finish: one side polished
Colbat Properties
Name: [...]
2019-05-08meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
100
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
100
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
100
N
Phos
CZ
-100
1-20
180-200
P/P
PRIME
100
N
Phos
CZ
-100
300-350
P/P
PRIME
100
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
100
N
Phos
CZ
-100
350-400
P/P
PRIME
100
N
Phos
CZ
-100
1-3
350-400
P/P
PRIME
100
N
As
CZ
-100
.001-.005
375-425
P/P
PRIME
100
N
Phos
CZ
-100
1-20
375-425
P/E
PRIME
100
N
Phos
CZ
-100
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
450-500
P/P
PRIME
100
N
Sb
CZ
-100
.005-.02
450-500
P/P
PRIME
100
N
Phos
FZ
-100
>3000
450-500
P/P
PRIME
100
N
As
CZ
-100
.001-.005
500-550
P/E
PRIME
100
N
Sb
CZ
-100
.005-.02
500-550
P/E
PRIME
100
N
Phos
FZ
-100
>3000
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
N
Phos
CZ
-100
1-20
500-550
P/E/OX
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 12″ Dummy Grade Silicon Wafer Thickness 650-700um.
12” 300mm dummy grade wafers
Surface is double side polished
thickness 650-700um
V Notch(SMI STD)
slight scratch(with no stains or heavy/deep scratches)
Dummy grade silicon wafers perform very efficiently for experimental and testing projects. These [...]
2019-06-24meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM-XIAMEN, one of leading gallium arsenide wafer manufacturers, can offer Gallium Arsenide(GaAs) wafer with high mobility. Normally mobility of n type/Si doped GaAs is above 1000cm2/V.s, mobility of p type/Zn doped GaAs is above 50~120cm2/V.s,and mobility of undoped GaAs is require to above 3500cm2/V.s, [...]
2020-03-06meta-author
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Polycrystallline Zr substrate
Purity: 99.5%
Density: 6.52 g/cm3
Melting Point: 1855ºC
Average Grain Size: 10~50 Microns ( No annealling )
Substrate dimension: 10 x 10 x0.5 [...]
2019-05-21meta-author