PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm
Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics
The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]
PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Type
Dopant
Orien
Res
(Ohm-cm)
Thick
(um)
Polish
Grade
Description
PAM2716
150mm
N/A
650um
SSP
MECH
Low cost Si Wafer great for spin coating.
PAM2717
150mm
P
B
<100>
0-10
620 um
SSP
Test
Test Grade Silicon great for wafer processing studies.
PAM2718
150mm
N
<100>
0-100
625um
SSP
Test
6″ diameter (150mm), silicon wafers, N-type.
PAM2719
150mm
P
B
<100>
0.006-0.012
525um
SSP
Test
With Oxide Back Seal
PAM2720
150mm
P
B
<100>
1-100
500um
SSP
Test
2 SEMI-STD FLATS WHERE [...]
2019-02-20meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm.
3″ Si FZ
Diameter 76-76.6mm
Thickness 229-249μm
Resistivity 39-47Ωcm
TTV ≤10μm
RRG ≤ 7%
about 1.5mil is etched from the surfaces in order to remove any surface damage
1.5mil = 1.5*25.4= 38.1μm
1.1 Wafers are to be [...]
2019-08-22meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
1″
50 ±10
P/P
1-100
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers
n-type Si:P
[100]
1″
280
P/P
1-20
SEMI Prime
n-type Si:P
[100]
1″
280
P/E
1-5
SEMI
n-type Si:P
[100]
1″
1500
P/E
1-20
Prime,
n-type Si:P
[100]
1″
525
P/E
0.05-0.15
SEMI
n-type Si:P
[111]
1″
330
P/E
FZ >90
Prime
p-type Si:B
[100]
1″
775
P/E
8-12
SEMI Prime
p-type Si:B
[100]
24mm
300
P/E
1-100
Prime,
p-type Si:B
[100]
1″
300
P/E
1-10
Prime,
p-type Si:B
[100]
1″
500
P/E
1-10
p-type Si:B
[100]
1″
380
P/E
0.003-0.005
SEMI Prime
p-type Si:B
[100]
1″
275
P/E
0.002-0.005
Prime
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author