PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 2) In part one of these series, LEDinside explored Philips, Osram and Cree’s vertical integration strategies. In the second part of this series we will take a closer look at major Chinese LED companies MLS and Elech-Tech [...]
Ternary semiconductor thin films of InAsP epitaxially on InP can be offered to customers for developing a better and a more reliable distributed feedback (DFB) lasers. Our InAsP layer has excellent properties, the size of the InAsP layer can be controlled by the height [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 n- Si:P 7±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±0.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 21 n- Si:P 150 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 22.5 n- Si:P 12±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28.5 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 26 n- Si:P 18±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 11 n- Si:P 2±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27 n- Si:P 220 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 27.5 n- Si:P >250 N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 28 n- Si:P 165 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 43688 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 9-11 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 28 n- Si:P 11±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 8-12 n- Si:P 43468 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 30 n- Si:P 11±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 4±10% N/N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 5 n- Si:P 1.5±10% N/N/N/N+ 4″Øx525μm n- [...]
PAM-NIS CZT radionuclide recognizer is compact and portable with following advantages: 1) The energy resolution is less than 1.8% at 662keV, which is higher than scintillator detectors; 2) The detector size is smaller than Ge detector, working at room temperature without cooling; 3) It can be recharged [...]
GaAs / AlGaAs / GaAs epi wafer in the diameter of 2” or 4” is available. This GaAs epitaxial wafer is applicable for semiconductor microwave devices and microwave monolithic integrated circuits. Here comes the typical structure of gallium arsenide epi wafer, please see below: 1. GaAs Wafer Epitaxial Structures Structure 1: 2”GaAs/AlGaAs/GaAs epi wafer S.No Parameters Specifications 1 GaAs substrate layer [...]
As the basis for making photovoltaic cells and integrated circuits, silicon wafer cleaning is very important. The effect of cleaning directly affects the final performance, efficiency and stability of photovoltaic cells and integrated circuits. Cleaning the silicon wafer not only removes impurities on the [...]
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