PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production.
PAM XIAMEN offers 4″ FZ N type Si wafer, which can be used for research on silicon quantum devices. GQ23b Silicon wafers, per SEMI Prime, P/P 4″Ø×525±10μm, FZ n-type Si:P [100]±0.5°, Ro=(7,000-10,000)Ohmcm, TTV<5μm, Bow<30μm, Warp<30μm, Both-sides-polished, SEMI Flat one: Length 32.5±2mm @ 110, Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, [...]
Highlights •Nanoscale defects in III–V materials, grown over Si were characterized with CAFM. •The defects exhibit higher conductivity. •The contact rectifying feature is hide by a larger current under the reverse bias. •Patterned samples fabricated using Aspect Ratio Trapping were also characterized. Abstract The implementation of high mobility devices requires [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]
Highlights •Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice. •Emphasis on understanding the inconclusive crystalline morphology at initial layers. •Observed low TD in HRTEM and low RMS in AFM. •Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD. •SAEDP shows fcc [...]
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-21)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
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