Silicon Ingots -1
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
2.7
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats
1.15
FZ 6″Ø×25mm [...]
2019-02-15meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[100]
6″
675
OxP/EOx
0.001-0.005
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick
p-type Si:B
[100]
6″
735
P/P
FZ >50
Prime, TTV<2μm
p-type Si:B
[100]
6″
650
P/P
FZ 8-13
SEMI Prime (57.5mm)
n-type Si:P
[100]
6″
475
P/P
FZ 60-75
SEMI Prime, MCC Lifetime>14,980μs, Lasermark
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
800 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
950 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI Prime (57.5mm)
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI [...]
2019-03-04meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there [...]
2021-04-12meta-author
PAM XIAMEN offers TiO2 Coated Sodalime Glass.
TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm
TiO2 Coated Sodalime Glass
Dimension: 1″ x1″x 0.7mm
Polish: both sides are optically clear
Nominal TiO2 film thickness: 150 nm +/- 10%
For more information, please visit our website: [...]
2019-04-29meta-author