PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows:
1. N Type GaN Substrate Datasheet
1.1 4″(100mm) Undoped Free-standing GaN Substrate
Item
PAM-FS-GaN100-U
Conduction Type
Undoped
Size
4″(100)+/-1mm
Thickness
350-450um
Orientation
C-axis(0001)+/-0.5°
Primary Flat Location
(1-100)+/-0.5°
Primary Flat Length
–
Secondary Flat Location
(11-20)+/-3°
Secondary Flat Length
–
Resistivity(300K)
<0.5Ω·cm
Dislocation Density
<5×10^6cm-2
FWHM
–
TTV
<=35um
BOW
<=50um
Surface Finish
Front Surface:Ra<0.2nm.Epi-ready polished
Back Surface:1.Fine ground
2.Rough grinded
Usable Area
≥ 90 [...]
2020-03-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
4″
1000
P/E
1-10
SEMI Prime
n-type Si:Sb
[111-4°]
4″
450
P/E
0.025-0.045
SEMI Prime
n-type Si:Sb
[111-2.5°]
4″
625
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[111]
4″
525
P/E
0.016-0.020
SEMI Prime
n-type Si:Sb
[111-4°]
4″
525
P/E
0.010-0.020
SEMI Prime
n-type Si:Sb
[111-2°]
4″
380
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.008-0.018
SEMI Prime
n-type Si:Sb
[111-3°]
4″
400
P/E
0.005-0.018
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
400
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-4°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
4″
525
P/E
0.001-0.005
SEMI Prime
n-type Si:As
[111-3°]
4″
525
P/E
0.001-0.005
SEMI Prime
Intrinsic Si:-
[100]
4″
525
P/E
400-1,000
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-03-06meta-author
PAM XIAMEN offers Nd YAG Nd Doped Yttrium Aluminium Garnet Laser Crystal.
Main Specifications
dimensional tolerance:
Dia:< +/-0.025 mm ,length: < +/-0.5 mm
flatness:
λ/8 @633nm
Surface fineness:
10/5
flatness:
20 arc sec.
verticality:
5 arc min
orientation:
<111> crystalline direction,< +/-0.5°
coating film:
AR coating, HR Coating
reflect:
R<0.2%@1064, HR:R>99.8%@1064,R<5%@808nm,
clear aperture:
>95% central area
wavefront distortion:
<7mm diameter : <λ/8 per inch @ 633nm,
7mm diameter : <λ/10per inch @ 633nm
Publications related to YAG laser crystals:
[1]
J. E. Geusic et al., “Laser oscillations in Nd-doped yttrium aluminum, yttrium gallium and gadolinium garnets”, Appl. Phys. Lett. 4 (10), 182 (1964)
[2]
D. Y. Shen et al., “Highly efficient in-band pumped Er:YAG laser [...]
2019-03-15meta-author
PAM XIAMEN offers BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES.
Physical Parameters
Crystal structure
Tetragonal, tP5, P4mm, No. 99
Growth method
Top seeded solution method
Unit cell constant
a=3.995 Å
Melt point (℃)
1,625 °C (2,957 °F; 1,898 K)
Density (g/cm3)
6.02
Hardness (mohs)
6-6.5
Thermal expansion(/℃)
9.4×10-6
Dielectric constants
ea = 3700, ec = 135 (unclamped)
ea = 2400, e c = 60 (clamped)
Chemical stability
Insoluble in water
Transmission wavelength
0.45 ~ 6.30 mm
Size
10×3m, 10×5m, 10×10mm, 15×15mm, [...]
2019-03-11meta-author
The SiC and GaN power semiconductor market will exceed $10 billion by 2027!
Key conclusions:
Emerging-market silicon carbide(SiC) and gallium nitride(GaN) power semiconductors are expected to reach nearly $1 billion by 2020, driven by demand for hybrid and electric vehicles, power and photovoltaic (PV) inverters.
The use [...]
2018-09-13meta-author
Nichia Develops Higher Power Green Laser Diodes
CompoundSemi News Staff
November 23, 2012…Nichia Corporation reports that it has successfully developed a high-power pure green laser diode which has optical output power higher than 1W with 525nm lasing wavelength. Nichia says that the laser will be applied [...]
2013-02-28meta-author