PAM XIAMEN offers 3″CZ Prime Silicon Wafer
Item3, 50pcs
Silicon wafer:
i. Diameter: 76.2 mm ± 0.5 mm,
ii. Thickness: 375μm ±25μm
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: CZ
[...]
2020-03-25meta-author
How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of [...]
2022-07-27meta-author
PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]
2020-05-14meta-author
PAM XIAMEN offers 4″ Diameter Wafer.
4″ Diameter Wafer
Ge N-type 4” ,undoped
Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped)
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP
Ge Wafer (100) . Undoped, 4″ [...]
2019-04-25meta-author
PAM XIAMEN offers 8″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
8″
725
P/E
FZ 2,000-6,000 {2,500-3,700}
SEMI notch Prime, TTV<6μm, Bow<15μm, Warp<40μm
p-type Si:B
[100]
8″
725
P/E
8-12
SEMI notch Prime, TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.1-100.0
TEST grade, SEMI notch,TTV<4µm
p-type Si:B
[100]
8″
725
P/E
MCZ 0.005-0.010
Prime, SEMI notch,TTV<4µm
n-type Si:P
[100]
8″
725
P/P
1-2
SEMI notch Prime, Up to 200 wafers available
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in [...]
2019-03-04meta-author
Actually, gallium oxide(Ga2O3) is not a new technology. Studies on gallium oxide applications in the field of power semiconductors are carried out by companies and research institutions all the time. And the gallium oxide material is mainly from Japan. With the development of Ga2O3 applications requirements becoming clearer, the performance requirements for high-power devices are getting [...]
2021-04-19meta-author