PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm
Silicon ingot, per SEMI, G Ø76mm
FZ n-type Si:P[100]±2.0°
Ro=(1,500-7,000)Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
PAM XIAMEN offers KBr Potassium Bromide Crystal Substrate.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Main parameters
Crystal structure
M3
Growth method
crystallization process
Crystal lattice parameters
a=5.596Å
Density
2.75(g/cm3)
Index of refraction
1.49025
Surface roughness
< 5 [...]
2019-03-12meta-author
PAM XIAMEN offers 12 inch Si dummy wafer:
Surface:double side polished;
Thickness ≥750um;
V Notch(SEMI STD);
Slight scratch (with no stains or heavy/deep scratches);
About the Si dummy wafer
According to different application scenarios in the fab, silicon wafers can be divided into two categories:
1.Prime Wafer, which is directly used for [...]
2021-04-22meta-author
Livermore, CA and Tokyo (Marketwire) – Bridgelux Inc., a leading developer and promoter of LED lighting technologies and solutions, and Toshiba Corporation, a world-leading semiconductor manufacturer, today announced that Bridgelux and Toshiba have achieved the industry’s top class 8″ GaN on SiliconLED chip emitting [...]
2012-05-22meta-author
PAM-XIAMEN can supply silicon wafers to meet your application demands, more wafer specifications please visit: https://www.powerwaywafer.com/silicon-wafer.
The purity, surface flatness, cleanliness and impurity contamination of semiconductor silicon wafers have an extremely important influence on the chips. The local flatness of silicon wafer is one of [...]
2022-09-20meta-author
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers
Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]