GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies TECHNOLOGIES The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology. The MESFET (fig. 2a) still is the working [...]
Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less than 1 nm rms roughness [...]
Numerical simulation of pixellated CdZnTe detector for medical radionuclide imaging application The recent development of CdZnTe detectors has made it possible to produce CdZnTe based clinical radionuclide imagers. We therefore investigate the pixellation geometry ideal for this application using numerical simulation. These studies indicate that, for a fixed pixel pitch, configuring the detector with [...]
GaN Wafer Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie: GaN substrate wafer GaN on sapphire GaN on silicon HEMT wafer AlN/GaN on sapphire AlGaN/GaN on sapphire Here is relative information of GaN wafer: GaN wafer price/GaN wafer cost: But while LED and power electronics [...]
Effects of sample processing on the performance of CdZnTe crystals Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal temperature tolerance during the detector [...]
LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have [...]
We can provide 2″ UV LED wafer and AlN wafer for medical & scientific applications including photodynamic therapy also benefit from a high power and high flux density LED. 1. Features & Dimensions of UV LED Wafer Growth Technique – MOCVD Substrate Material:Sapphire Substrate (Al2O3) Substrate Conduction: Insulating Substrate Orientation: c-Plane (0001)0.2°±0.1 Diameter: 50.8mm±0.15mm Thickness: 430μm±20μm Wavelength:395nm-405nm 2. [...]
Ultra High Flux 2-D CdZnTe Monolithic Detector Arrays for X-Ray Imaging Applications The performance of 2-D CdZnTe monolithic detector arrays designed for high flux X-ray imaging applications was studied. For the first time we have obtained 5 times 106 counts/s/mm2 count-rate for aCdZnTe pixelated detector array. This count-rate is more than twice the highest count-rate [...]
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was 2. The LDs showed an [...]
Polarization degree and vector angle effects on a CdZnTe focal plane performance To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining the same observations of a [...]
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