PAM XIAMEN offers Thinned Silicon Wafers! We have them! In Stock and ready to ship!
Free Standing Thin Silicon Wafers
We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror [...]
2019-02-14meta-author
PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented polycrystalline)/Cr [...]
2019-04-16meta-author
We are investigating the feasibility of a high resolution positron emission tomography (PET) insert device based on the CdZnTe detector with 350 µm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its image resolution. In this paper, we [...]
2019-10-25meta-author
PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM-XIAMEN is able to supply you with P type SiC substrate, more specifications please see: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html.
SiC single crystal has the characteristics of wide bandgap, high critical breakdown electric field, high thermal conductivity, high carrier saturation drift speed, and good stability. Among the numerous crystal [...]
2024-04-19meta-author
THz Generation Process in LT-GaAs
Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]