GaAs wafer is an important III-V compound semiconductors, a sphalerite lattice structure with lattice constant of 5.65 x 10-10m, melting point of 1237 C and band gap of 1.4 electron volts.Gallium arsenide wafer can be made into semi-insulating materials with resistivity higher than silicon and germanium by three orders of magnitude, which can be used to fabricate integrated circuit substrates, infrared detectors, gamma photon detectors and so on. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices made of GaAs have the advantages of high frequency, high temperature, good low temperature performance, low noise and strong radiation resistance. In addition, it can also be used to fabricate transfer devices – bulk effect devices.
(الغاليوم زرنيخيد) الغاليوم ويفر وإبيتاز: الغاليوم ويفر، نوع N، P نوع أو شبه العازلة، حجمها من 2 "إلى 6". الغاليوم برنامج التحصين الموسع رقاقة لHEMT، pHEMT، mHEMT وHBT
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رقاقة Epi للديود الليزري
GaAs based LD epitaxy wafer, which can generate stimulate emission, is widely used for fabricating laser diode since the superior GaAs epitaxial wafer properties make the device a low energy consumption, high efficiency, long lifetime and etc. In addition to gallium arsenide LD epi wafer, commonly used semiconductor materials are cadmium sulfide (CdS), indium phosphide (InP), and zinc sulfide (ZnS).
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الغاليوم (الغاليوم زرنيخيد) يفر
As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor C doped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, C doped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.
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الغاليوم Epiwafer
تقوم شركة PAM-XIAMEN بتصنيع أنواع مختلفة من مواد أشباه الموصلات من النوع n المطلية بالسيليكون epi wafer III-V استنادًا إلى Ga وAl وIn وAs وP المزروعة بواسطة MBE أو MOCVD. نحن نوفر هياكل Epiwafer GaAs المخصصة لتلبية مواصفات العملاء، يرجى الاتصال بنا للحصول على مزيد من المعلومات.
