Thermal oxides on the Ga-face of low defect density bulk gallium nitride (GaN) were controllably produced under varying conditions and subsequently analyzed. The thermal oxidation was performed in a dry oxygen atmosphere at different temperatures and different oxidation times. Each oxide layer was identified [...]
PAM XIAMEN offers SiO2 Silica Quartz Single Crystal.
Major capability parameter
Growth method
hydro-thermal method
Crystal Structure
M6
Unit cell constant
a=4.914Å c=5.405 Å
Melt point(℃)
1610℃
Density
2.684g/cm3
Hardness
7(mohs)
Thermal conductivity
0.0033cal/cm℃
Planned constant
1200uv/℃(300℃)
Index of refraction
1.544
Thermal expansion
α11:13.71×106 / ℃ α33:7.48×106 /℃
Frequency constant
1661(kHz/mm)
Crystal orientation
Y、X or Z,30º~42.75 º ±5
Polishing
Single or double Ra<10Å
Thickness
0.5mm±0.05mm TTV<5um
Diameter
Φ2″(50.8mm)、Φ3″(76.2mm)、Φ4″(100mm)±0.2mm
main positioning:22±1.5mm (Φ3″) 32±3.0 (Φ4″)
Secondary positioning :10mm±1.5mm
For more information, please [...]
2019-03-15meta-author
For non-cubic crystals, they are inherently anisotropic, that is, different directions have different properties. Take the silicon carbide crystal faces for example as below:
The space groups of 4H-SiC and 6H-SiC are P63mc, and the point group is 6mm. Both belong to the hexagonal system [...]
2021-04-07meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
FZ SCRAP material n-type, Ro: 1,000-10,000 Ohmcm
FZ SCRAP material n-type, Ro: 1-1,000 Ohmcm
FZ SCRAP material Intrinsic, Ro: >10,000 Ohmcm
6″Ø ingot p-type Si:B[100], Ro: 1-10 Ohmcm, (1 ingot: 21mm)
6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 0.001-0.005 Ohmcm, Ground, (1 ingot: 188mm)
6″Ø ingot p-type Si:B[100], [...]
2019-03-08meta-author
Getting to 450 mm Wafer Sooner
As device circuits continue to get smaller, the wafers that they are made from are getting larger — again. A few years ago device manufacturers — both vertically integrated companies and independent foundries — pushed maximum wafer diameters from [...]
2013-03-14meta-author