We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed AlGaN/GaN HEMT [...]
2018-01-10meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″/4” size AlGaN–GaN HEMTs Grown on Sapphire Substrates,which is on mass production [...]
High quality large-area single crystal copper substrate is an effective method for preparing high-quality large-area single crystal graphene. There are several main methods for preparing single crystal copper: 1) Commercial single crystal copper is mostly produced by using the high-temperature hot casting mode continuous [...]
2024-03-12meta-author
PAM-XIAMEN offers GaN on silicon HEMT wafer for Power, E-mode. Because the normally-on characteristic will Increase the complexity of circuit design and power consumption, designing an enhanced (E-Mode) HEMT that is turned off under zero grid bias will be crucial for advancing the application of GaN-on-Silicon HEMT in [...]
2019-05-17meta-author
GaN/SiC HEMT epi-wafers
PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected [...]
2020-03-18meta-author
PAM-XIAMEN, a leading germanium ingot manufacturer, has germanium (Ge) crystals for sale. Due to its scarcity of resources, excellent optical and physical properties, germanium material is widely used in high-tech fields such as fiber optic systems, infrared optical systems, electronics and solar applications, detectors, [...]
2021-07-01meta-author