PAM XIAMEN offers 3″ CZ Si Lapped Wafer
3″ CZ Si Lapped Wafer
N-type
Resistivity6-10Ωcm
Thickness180-185um
Orientation <111>
Double Side Lapped
SEMI Flat
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06التلوي المؤلف
HEMTs evolved from Field Effect Transistors (FETs) are suitable for manufacturing monolithic microwave integrated circuits (MMICs).
HEMTs were initially generated to obtain high electron mobility in semiconductor devices at room temperature. The electron mobility of FETs is limited even with high doping levels, so high [...]
2022-07-25التلوي المؤلف
Chrome photomask is available for transferring high-precision circuit design. The photomask is the pattern film in the chip manufacturing process, and is one of the determined factors for chip accuracy and quality. More specifications please see as follows:
No.1 5 inch Chrome Mask Plate (PAM180119-MASKW)
Material
Soda [...]
2021-11-05التلوي المؤلف
GaN epi layers are usually grown by MOCVD on various substrates, such as sapphire, Si and SiC substrate. The choice of substrate varies according to the needs of the applications. So for RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) application, SiC substrate, which [...]
2022-03-21التلوي المؤلف
Why are the wafers provided by PAM-XIAMEN round? Because the manufacturing process determines that it is round. Take the production process of silicon wafers as an example: The purified high-purity polysilicon is spin-grown on a seed. After the polycrystalline silicon is melted, put it [...]
2022-05-26التلوي المؤلف
The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive [...]
2018-11-21التلوي المؤلف